Assignee
BRIERE MICHAEL A
US·37 granted patents·4 pending applications·258 citations·filing 2006–2012
Top patents by PatentIndex Score
41 records- 0196US8796738B2Group III-V device structure having a selectively reduced impurity concentrationBRIERE MICHAEL A·Filed 2012·Granted Aug 5, 2014·14 cites·18 claims
- 0296US8084785B2III-nitride power semiconductor device having a programmable gateBRIERE MICHAEL A·Filed 2007·Granted Dec 27, 2011·26 cites·20 claims
- 0395US8183595B2Normally off III-nitride semiconductor device having a programmable gateBRIERE MICHAEL A·Filed 2006·Granted May 22, 2012·20 cites·20 claims
- 0494US8482035B2Enhancement mode III-nitride transistors with single gate Dielectric structureBRIERE MICHAEL A·Filed 2011·Granted Jul 9, 2013·12 cites·20 claims
- 0594US8148964B2Monolithic III-nitride power converterBRIERE MICHAEL A·Filed 2010·Granted Apr 3, 2012·13 cites·13 claims
- 0693US9087812B2Composite semiconductor device with integrated diodeBRIERE MICHAEL A·Filed 2012·Granted Jul 21, 2015·13 cites·25 claims
- 0792US8957454B2III-Nitride semiconductor structures with strain absorbing interlayer transition modulesBRIERE MICHAEL A·Filed 2012·Granted Feb 17, 2015·10 cites·36 claims
- 0892US8338861B2III-nitride semiconductor device with stepped gate trench and process for its manufactureBRIERE MICHAEL A·Filed 2008·Granted Dec 25, 2012·18 cites·16 claims
- 0991US9793259B2Integrated semiconductor deviceBRIERE MICHAEL A·Filed 2012·Granted Oct 17, 2017·6 cites·8 claims
- 1091US8674670B2DC/DC converter with depletion-mode III-nitride switchesBRIERE MICHAEL A·Filed 2010·Granted Mar 18, 2014·11 cites·18 claims
- 1190US8557644B2Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor deviceBRIERE MICHAEL A·Filed 2011·Granted Oct 15, 2013·8 cites·20 claims
- 1290US8093597B2In situ dopant implantation and growth of a III-nitride semiconductor bodyBRIERE MICHAEL A·Filed 2010·Granted Jan 10, 2012·10 cites·20 claims
- 1388US8395132B2Ion implanting while growing a III-nitride layerBRIERE MICHAEL A·Filed 2008·Granted Mar 12, 2013·9 cites·13 claims
- 1486US9281388B2Composite semiconductor device with a SOI substrate having an integrated diodeBRIERE MICHAEL A·Filed 2012·Granted Mar 8, 2016·8 cites·29 claims
- 1585US8659030B2III-nitride heterojunction devices having a multilayer spacerBRIERE MICHAEL A·Filed 2012·Granted Feb 25, 2014·7 cites·30 claims
- 1684US8981380B2Monolithic integration of silicon and group III-V devicesBRIERE MICHAEL A·Filed 2010·Granted Mar 17, 2015·7 cites·12 claims
- 1784US8809909B2High voltage III-nitride transistorBRIERE MICHAEL A·Filed 2011·Granted Aug 19, 2014·6 cites·5 claims
- 1883US8476885B2Monolithic group III-V power converterBRIERE MICHAEL A·Filed 2012·Granted Jul 2, 2013·4 cites·13 claims
- 1982US8680579B2Individually controlled multiple III-nitride half bridgesBRIERE MICHAEL A·Filed 2008·Granted Mar 25, 2014·7 cites·11 claims
- 2080US8530938B2Monolithic integrated composite group III-V and group IV semiconductor device and method for fabricating sameBRIERE MICHAEL A·Filed 2009·Granted Sep 10, 2013·6 cites·6 claims
- 2177US9219058B2Efficient high voltage switching circuits and monolithic integration of sameBRIERE MICHAEL A·Filed 2011·Granted Dec 22, 2015·4 cites·18 claims
- 2277US8988133B2Nested composite switchBRIERE MICHAEL A·Filed 2012·Granted Mar 24, 2015·4 cites·27 claims
- 2377US8159003B2III-nitride wafer and devices formed in a III-nitride waferBRIERE MICHAEL A·Filed 2008·Granted Apr 17, 2012·5 cites·17 claims
- 2475US8270137B2Interposer for an integrated DC-DC converterBRIERE MICHAEL A·Filed 2008·Granted Sep 18, 2012·12 cites·8 claims
- 2574US9000746B2Power converter with split power supplyBRIERE MICHAEL A·Filed 2011·Granted Apr 7, 2015·3 cites·9 claims
- 2674US8791503B2III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufactureBRIERE MICHAEL A·Filed 2008·Granted Jul 29, 2014·4 cites·15 claims
- 2770US9236462B2Programmable gate III-nitride power transistorBRIERE MICHAEL A·Filed 2011·Granted Jan 12, 2016·1 cites·20 claims
- 2866US8564124B2Semiconductor packageBRIERE MICHAEL A·Filed 2007·Granted Oct 22, 2013·2 cites·10 claims
- 2965US8729561B1P type III-nitride materials and formation thereofBRIERE MICHAEL A·Filed 2012·Granted May 20, 2014·1 cites·19 claims
- 3064US9159679B2Semiconductor package with integrated passives and method for fabricating sameBRIERE MICHAEL A·Filed 2009·Granted Oct 13, 2015·2 cites·13 claims
- 3164US8860085B2III-nitride semiconductor deviceBRIERE MICHAEL A·Filed 2011·Granted Oct 14, 2014·1 cites·17 claims
- 3261US9105703B2Programmable III-nitride transistor with aluminum-doped gateBRIERE MICHAEL A·Filed 2011·Granted Aug 11, 2015·1 cites·20 claims
- 3361US9076853B2High voltage rectifier and switching circuitsBRIERE MICHAEL A·Filed 2011·Granted Jul 7, 2015·1 cites·18 claims
- 3459US9378965B2Highly conductive source/drain contacts in III-nitride transistorsBRIERE MICHAEL A·Filed 2009·Granted Jun 28, 2016·0 cites·7 claims
- 3557US8455922B2Programmable gate III-nitride semiconductor deviceBRIERE MICHAEL A·Filed 2012·Granted Jun 4, 2013·0 cites·20 claims
- 3653US2009050939A1Iii-nitride deviceBRIERE MICHAEL A·Filed 2008·Application pending·0 cites
- 3751US8859345B2Method for fabrication of III-nitride heterojunction semiconductor deviceBRIERE MICHAEL A·Filed 2011·Granted Oct 14, 2014·0 cites·12 claims
- 3851US8063613B2Power converter driver with split power supplyBRIERE MICHAEL A·Filed 2007·Granted Nov 22, 2011·2 cites·23 claims
- 3948US2011284869A1High Voltage Durability III-Nitride HEMTBRIERE MICHAEL A·Filed 2011·Application pending·0 cites
- 4041US2012274366A1Integrated Power StageBRIERE MICHAEL A·Filed 2012·Application pending·0 cites
- 4137US2012241820A1III-Nitride Transistor with Passive Oscillation PreventionBRIERE MICHAEL A·Filed 2012·Application pending·0 cites
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