Method for producing single crystal silicon solar cell and single crystal silicon solar cell

Abstract

A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

1 . A single crystal silicon solar cell comprising, successively:
 a transparent insulator substrate;   a transparent electroconductive film;   a single crystal silicon layer in which a p-n junction is formed; and   an electrode,   wherein the single crystal silicon solar cell is produced by a method comprising:
 preparing the transparent insulator substrate and a single crystal silicon substrate having a first conductivity type; 
 implanting at least one of hydrogen ions and rare gas ions into the single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; 
 forming a transparent electroconductive film on at least one surface of the transparent insulator substrate; 
 conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; 
 bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; 
 applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; 
 forming a diffusion layer having a second conductivity type in the single crystal silicon layer, which conductivity type is different from the first conductivity type, in a manner that a p-n junction is formed in the single crystal silicon layer; and 
 forming an electrode on the single crystal silicon layer. 
   
     
     
         2 . The single crystal silicon solar cell according to  claim 1 , wherein
 the surface activating treatment is at least one of a plasma treatment and an ozone treatment,   the transparent insulator substrate is made of one selected from the group consisting of quartz glass, crystallized glass, borosilicate glass, and soda-lime glass,   the transparent electroconductive film contains at least one selected from the group consisting of titanium oxide, zinc oxide, tin oxide, and indium oxide, and a donor-forming additive,   the formation of the transparent electroconductive film is conducted by at least one selected from the group consisting of a reactive sputtering method, a reactive vapor deposition method, a CVD method, and a dip coating method, and   the ion implantation is conducted at a depth between 0.1 μm inclusive and 5 μm inclusive from the ion implanting surface.   
     
     
         3 . The single crystal silicon solar cell according to  claim 1 , wherein the single crystal silicon solar cell can be seen through from one surface side toward the other surface side. 
     
     
         4 . The single crystal silicon solar cell according to  claim 2 , wherein the single crystal silicon solar cell can be seen through from one surface side toward the other surface side.