Ohmic contacts for semiconductor structures

Abstract

A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl x N y material at least partially contiguous with the semiconductor structure. The TiAl x N y material can be TiAl 3 . The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl x N y material, such that the TiAl x N y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.

1 . A composition for formation of an ohmic contact on a semiconductor structure, comprising:
 a TiAl x N y  material at least partially contiguous with the semiconductor structure;   wherein the semiconductor structure comprises at least one semiconductor material;   wherein x and y do not simultaneously equal zero;   wherein when y equals zero, x does not equal one.   
     
     
         2 . The composition of  claim 1 , wherein the contiguity between the TiAl x N y  material and the semiconductor structure comprises at least partial contiguity with an n-doped GaN material. 
     
     
         3 . The composition of  claim 1 , wherein the contiguity between the TiAl x N y  material and the semiconductor structure comprises at least partial contiguity with at least one semiconductor material. 
     
     
         4 . The composition of  claim 1 , wherein the contiguity between the TiAl x N y  material and the semiconductor structure comprises at least partial contiguity with at least one semiconductor material which can be undoped, n-doped, or p-doped, wherein the undoped, n-doped, or p-doped semiconductor material comprises in either or both its pre- or post-doped state at least one of: GaN, InGaN, AlGaN, AlGaInN, InN, GaAs, AlGaAs, AlGaAs, GaAsP, AlGaInP, GaP, AlGaP, ZnSe, SiC, Si, diamond, BN, AlN, MgO, SiO, ZnO, LiAlO 2 , SiC, Ge, InAs, InAt, InP, C, Ge, SiGe, AlSb, AlAs, AlP, BP, BAs, GaSb, InSb, Al z Ga 1-z As, InGaAs, In z Ga 1-z As, InGaP, AlInAs, AlInSb, GaAsN, AlGaP, AlGaP, InAsSb, InGaSb, AlGaAsP, AlInAsP, AlGaAsN, InGaAsN, InAlAsN, GaAlAsN, GaAsSbN, GaInNAsSb, or GaInAsSbP. 
     
     
         5 . The composition of  claim 1 , wherein the TiAl x N y  material is at least partially contiguous with the semiconductor structure prior to or during at least part of an annealing process. 
     
     
         6 . The composition of  claim 1 , wherein the semiconductor structure is to become a light emitting diode (LED) semiconductor device. 
     
     
         7 . The composition of  claim 1 , wherein the TiAl x N y  material is added using at least one of the following: atomic layer deposition, physical vapor deposition (PVD), or chemical vapor deposition (CVD). 
     
     
         8 . The composition of  claim 1 , wherein the TiAl x N y  material is approximately 50 to 2000 angstroms thick. 
     
     
         9 . The composition of  claim 1 , wherein the TiAl x N y  material is approximately 200 angstroms thick. 
     
     
         10 . The composition of  claim 1 , wherein x is equal to about 3 and y is equal to about zero. 
     
     
         11 . The composition of  claim 1 , wherein the composition further comprises:
 an aluminum material;   wherein the aluminum material is contiguous to at least part of the TiAl x N y  material;   wherein the TiAl x N y  material is between the semiconductor structure and the aluminum material.   
     
     
         12 . The composition of  claim 11 , wherein the aluminum material is added using at least one of the following: atomic layer deposition, physical vapor deposition (PVD), or chemical vapor deposition (CVD). 
     
     
         13 . The composition of  claim 11 , wherein the aluminum material is between about 5 and 4000 angstroms thick. 
     
     
         14 . The composition of  claim 11 , wherein the aluminum material is approximately 1000 angstroms thick. 
     
     
         15 . The composition of  claim 11 , wherein the TiAl x N y  material is between about 25 and 300 angstroms thick. 
     
     
         16 . The composition of  claim 11 , wherein the TiAl x N y  material is approximately 100 angstroms thick. 
     
     
         17 . The composition of  claim 1 , wherein x is between approximately 0 and 10. 
     
     
         18 . The composition of  claim 1 , wherein y is between about 0 and 10. 
     
     
         19 . A method for formation of an ohmic contact on a semiconductor structure, comprising a process of annealing the composition of  claim 1 . 
     
     
         20 . The method of  claim 19 , wherein the process of annealing takes place at or less than less than approximately 500 to 1500 degrees C. 
     
     
         21 . The method of  claim 19 , wherein the process of annealing takes place at or less than approximately 800 degrees C. 
     
     
         22 . The method of  claim 19 , wherein the process of annealing takes place for approximately 0.001 to 200 minutes. 
     
     
         23 . The method of  claim 19 , wherein the process of annealing takes place for approximately 30 to 60 seconds. 
     
     
         24 . A method for formation of an ohmic contact on a semiconductor structure, comprising the steps of:
 providing a semiconductor structure;
 wherein the semiconductor structure comprises an n-doped GaN material; 
   depositing a TiAl x N y  material contiguous to at least part of the n-doped GaN material;
 wherein the TiAl x N y  material is approximately 200 to 2000 angstroms thick; 
 wherein x and y do not simultaneously equal zero; 
 wherein when y equals zero, x does not equal one; and, 
   annealing the semiconductor structure and the TiAl x N y  material;
 wherein the annealing takes place at or less than approximately 660 to 800 degrees C., for a duration of approximately 30 to 60 seconds. 
   
     
     
         25 . A method for formation of an ohmic contact on a semiconductor structure, comprising the steps of:
 providing a semiconductor structure, wherein the semiconductor structure comprises an n-doped GaN material;   depositing a TiAl x N y  material contiguous to at least part of the n-doped GaN material;
 wherein the TiAl x N y  material is approximately 50 to 200 angstroms thick; 
 wherein x and y do not simultaneously equal zero; 
 wherein when y equals zero, x does not equal one; 
   depositing an aluminum material contiguous to at least part of the TiAl x N y  material, such that the TiAl x N y  material is between the aluminum material and the n-doped GaN material;
 wherein the aluminum material is approximately 1000 angstroms thick; and, 
   annealing the semiconductor structure and the TiAl x N y  material and the aluminum material;
 wherein the annealing takes place at or less than approximately 660 degrees C., for a duration of approximately 30 to 60 seconds. 
   
     
     
         26 . A composition or product formed at least in part by a method that comprises the method of any of  claim 19 ,  24 , or  25 . 
     
     
         27 . An LED comprising the composition of  claim 1  or prepared at least in part by a method that comprises any of the methods of  claim 19 ,  24 , or  25 .