US2011318714A1PendingUtilityA1

Implant material and method for manufacturing the same

Assignee: NIKAWA HIROKIPriority: Feb 10, 2009Filed: Feb 10, 2009Published: Dec 29, 2011
Est. expiryFeb 10, 2029(~2.6 yrs left)· nominal 20-yr term from priority
C23C 16/30Y10T428/31678A61L 2420/04A61K 6/831A61L 27/306A61L 27/025A61L 27/303A61L 27/08A61L 27/30A61L 27/04A61C 8/00
57
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

An implant material includes a base material, and a silicon-containing carbon thin film formed on a surface of the base material. The carbon thin film contains a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and a ratio of the SiC component is 0.06 or higher.

Claims

exact text as granted — not AI-modified
1 . An implant material comprising:
 a base material; and   a carbon thin film which is formed on a surface of the base material, and contains silicon, wherein   the carbon thin film contains a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and   a ratio of the SiC component is 0.06 or higher.   
     
     
         2 . The implant material of  claim 1 , wherein
 the ratio of the SiC component is 0.5 or lower.   
     
     
         3 . The implant material of  claim 1 , wherein
 the base material is metal.   
     
     
         4 . The implant material of  claim 1 , wherein
 the base material is a dental implant, an artificial tooth, or a crown restoration.   
     
     
         5 . A method for manufacturing an implant material comprising:
 preparing a base material for implant;   removing moisture from a chamber in which the base material is placed; and   introducing material gas as a carbon source and a silicon source into the chamber after the preparation of the base material to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition.

Join the waitlist — get patent alerts

Track US2011318714A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.