US2011318714A1PendingUtilityA1
Implant material and method for manufacturing the same
Est. expiryFeb 10, 2029(~2.6 yrs left)· nominal 20-yr term from priority
Inventors:Hiroki NikawaSeichiyou MakihiraYuichi MineYoshinori AbeTatsuyuki NakataniKeishi OkamotoYuki Nitta
C23C 16/30Y10T428/31678A61L 2420/04A61K 6/831A61L 27/306A61L 27/025A61L 27/303A61L 27/08A61L 27/30A61L 27/04A61C 8/00
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Claims
Abstract
An implant material includes a base material, and a silicon-containing carbon thin film formed on a surface of the base material. The carbon thin film contains a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and a ratio of the SiC component is 0.06 or higher.
Claims
exact text as granted — not AI-modified1 . An implant material comprising:
a base material; and a carbon thin film which is formed on a surface of the base material, and contains silicon, wherein the carbon thin film contains a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and a ratio of the SiC component is 0.06 or higher.
2 . The implant material of claim 1 , wherein
the ratio of the SiC component is 0.5 or lower.
3 . The implant material of claim 1 , wherein
the base material is metal.
4 . The implant material of claim 1 , wherein
the base material is a dental implant, an artificial tooth, or a crown restoration.
5 . A method for manufacturing an implant material comprising:
preparing a base material for implant; removing moisture from a chamber in which the base material is placed; and introducing material gas as a carbon source and a silicon source into the chamber after the preparation of the base material to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition.Join the waitlist — get patent alerts
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