Method of manufacturing a semiconductor device

Abstract

The semiconductor device of the present invention includes a first insulating film on a substrate having a first region and a second region, a light shielding film formed in the first region and an interconnect film formed in the second region in the first insulating film and a second insulating film having a first concave portion above the light shielding film in the first region and an interconnect hole having a via hole and a second concave portion in the second region in the second insulating film on the first insulating film, wherein an area of the light shielding film is overlapping an area of the first plurality of concave portions.

1 . A method of manufacturing a semiconductor device, comprising:
 providing a database including a relationship between shapes of reference grooves and corresponding reference waveforms of light reflected by the reference grooves;   irradiating light on actual grooves and detecting an actual waveform of light reflected by the actual grooves;   matching the actual waveform to one of the reference waveforms in the database to determine a shape of the actual grooves,   wherein the actual grooves are formed on a light shielding film in a test region; and   wherein the actual grooves are formed during a step in which an interconnect hole having a via hole and a trench are formed.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the actual grooves and the trench are of substantially equal shape. 
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein etching conditions are adjusted based on a difference between the shape of reference grooves and the actual grooves. 
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , comprising a further step of determining whether there is a difference between the shape of reference grooves and the actual grooves, and excluding a wafer from further processing if said difference is detected. 
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 1 , wherein another light shielding film is formed during a step in which the interconnect hole in the test region is formed. 
     
     
         6 . The method of manufacturing a semiconductor device according to  claim 1 , further comprising forming a metal film that fills the interconnect hole.