Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same

Abstract

Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.

1 . A slurry composition for selectively polishing silicon nitride relative to silicon oxide comprising:
 a first agent for reducing an oxide polishing rate, the first agent including poly(acrylic acid);   an abrasive particle;   water; and   a second agent for reducing an oxide polishing rate, the second agent including a peroxide compound.   
     
     
         2 . The slurry composition of  claim 1 , wherein the slurry composition has a pH in a range of about 1 to about 4. 
     
     
         3 . The slurry composition of  claim 1 , wherein the slurry composition comprises about 0.01 to about 10% by weight of the first agent, about 0.01 to about 10% by weight of the abrasive particle and a remainder of water. 
     
     
         4 . The slurry composition of  claim 1 , wherein the slurry composition comprises about 0.01 to about 10% by weight of the first agent, about 0.1 to about 30% by weight of the second agent, about 0.01 to about 10% by weight of the abrasive particle and a remainder of water. 
     
     
         5 . The slurry composition of  claim 1 , wherein the abrasive particle comprises a ceria abrasive particle. 
     
     
         6 . The slurry composition of  claim 5 , wherein the slurry composition comprises the ceria abrasive particle in a range of about 0.01 to about 1% by weight based on a total weight of the slurry composition. 
     
     
         7 . The slurry composition of  claim 5 , wherein the slurry composition comprises the ceria abrasive particle in a range of about 0.01 to about 0.6% by weight based on a total weight of the slurry composition. 
     
     
         8 . The slurry composition of  claim 5 , wherein the ceria abrasive particle has a primary particle of an average diameter in a range of about 5 to about 200 nm, and a secondary particle of an average diameter in a range of about 50 to about 1,000 nm. 
     
     
         9 . The slurry composition of  claim 1 , further comprising a dispersion stabilizing agent, the dispersion stabilizing agent including carboxylic acid.