Substrate cleaning apparatus and substrate cleaning method

Abstract

A substrate cleaning apparatus, comprises a process tank that holds a mixture containing a hydrogen peroxide solution and sulfuric acid and is used for cleaning a substrate immersed in said mixture; circulation piping that extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank and has a pump for causing circulation of said mixture; a heater disposed in said circulation piping configured to heat said mixture to a predetermined temperature; a chemical injection pipe configured to inject a hydrogen peroxide solution into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and a filter disposed in said circulation piping configured to remove particles in said mixture.

1 - 7 . (canceled) 
     
     
         8 . A substrate cleaning method, in which a mixture containing a hydrogen peroxide solution and sulfuric acid is held in a process tank in which a substrate is cleaned by being immersed in said mixture, and said mixture is made to circulate in circulation piping that has a pump and extends between a primary side of said process tank on which said mixture is injected into said process tank and a secondary side of said process tank on which said mixture is discharged from said process tank, the method comprising:
 heating said mixture to a predetermined temperature by a heater disposed in said circulation piping;   injecting a hydrogen peroxide solution from a chemical injection pipe into said circulation piping at a position between the primary side of said process tank and a secondary side, which is a downstream side, of said heater; and   removing particles in said mixture by a filter disposed in said circulation piping.   
     
     
         9 . The substrate cleaning method according to  claim 8 , wherein said filter is disposed between the primary side of said process tank and the secondary side of said heater, and
 said chemical injection pipe injects the hydrogen peroxide solution into said circulation piping at a position between a primary side, which is an upstream side, of said filter and the secondary side of said heater.   
     
     
         10 . The substrate cleaning method according to  claim 8 , wherein the temperature of said mixture in said process tank falls within a range of 120 degrees Celsius to 160 degrees Celsius. 
     
     
         11 . The substrate cleaning method according to  claim 9 , wherein the temperature of said mixture in said process tank falls within a range of 120 degrees Celsius to 160 degrees Celsius. 
     
     
         12 . The substrate cleaning method according to  claim 8 , wherein said substrate is a semiconductor wafer. 
     
     
         13 . The substrate cleaning method according to  claim 8 , wherein said chemical injection pipe is connected to said circulation piping at a primary side of said filter. 
     
     
         14 . The substrate cleaning method according to  claim 8 , wherein said chemical injection pipe is connected to a primary side of said filter.