Plasma processing apparatus

Abstract

The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.

1 - 2 . (canceled) 
     
     
         3 . The plasma processing device, comprising:
 a) a vacuum container;   b) an antenna-placing section provided between an inner surface and an outer surface of a wall of the vacuum container;   c) a radio-frequency antenna placed in the antenna-placing section; and   d) a dielectric separating member for separating the antenna-placing section from an internal space of the vacuum container.   
     
     
         4 . The plasma processing device according to  claim 3 , wherein the antenna-placing section is a hollow space formed between the aforementioned inner surface and the outer surface. 
     
     
         5 . The plasma processing device according to  claim 4 , wherein the hollow space is a hermetically closed space. 
     
     
         6 . The plasma processing device according to  claim 5 , wherein the hollow space is a vacuum. 
     
     
         7 . The plasma processing device according to  claim 5 , wherein the hollow space is filled with an inert gas. 
     
     
         8 . The plasma processing device according to  claim 4 , wherein the hollow space is filled with a solid dielectric material. 
     
     
         9 . The plasma processing device according to  claim 3 , wherein at least a portion of the wall is made of a solid dielectric and the radio-frequency antenna is embedded in the solid dielectric. 
     
     
         10 . The plasma processing device according to  claim 3 , wherein a plurality of the radio-frequency antennae are provided in one antenna-placing section. 
     
     
         11 . The plasma processing device according to  claim 3 , wherein a grounded electrode is provided between the radio-frequency antenna and the separating member. 
     
     
         12 . The plasma processing device according to  claim 11 , wherein a dielectric insulating member is inserted between the radio-frequency antenna and the grounded electrode. 
     
     
         13 . The plasma processing device according to  claim 11 , wherein the grounded electrode is a Faraday shield. 
     
     
         14 . The plasma processing device according to  claim 11 , wherein the grounded electrode is made to be in contact with the separating member so as to suppress an increase in a temperature of the separating member. 
     
     
         15 . The plasma processing device according to  claim 3 , further comprising a mechanism for suppressing an increase in a temperature of the separating member. 
     
     
         16 . The plasma processing device according to  claim 3 , wherein the separating member is made of a material selected from a group of oxides, nitrides, carbides and fluorides. 
     
     
         17 . The plasma processing device according to  claim 16 , wherein the separating member is made of a material selected from a group of quartz, alumina, zirconia, yttria and silicon nitride and silicon carbide. 
     
     
         18 . The plasma processing device according to  claim 3 , comprising a plurality of the antenna-placing sections. 
     
     
         19 . The plasma processing device according to  claim 4 , further comprising a cover provided on a side of the antenna-placing section facing the aforementioned outer surface. 
     
     
         20 . The plasma processing device according to  claim 19 , wherein the radio-frequency antenna is attached to the cover.