Capacitor structure with raised resonance frequency

Abstract

A dual-port capacitor structure includes a first electrode plate having a first opening; a second electrode plate having a second opening; and a third electrode plate, disposed in the first opening of the first electrode plate and the second opening of the second electrode plate. The first electrode plate, the second electrode plate and the third electrode plate locate on the same plane.

1 . A dual-port capacitor structure, comprising:
 a first electrode plate having a first opening;   a second electrode plate having a second opening; and   a third electrode plate, disposed in the first opening of the first electrode plate and the second opening of the second electrode plate, wherein the first electrode plate, the second electrode plate and the third electrode plate locate on the same plane.   
     
     
         2 . The dual-port capacitor structure according to  claim 1 , further comprising:
 a fourth electrode plate, wherein the first electrode plate and the fourth electrode plate do not locate on the same plane; and   a first interconnection for electrically connecting the third electrode plate and the fourth electrode plate.   
     
     
         3 . The dual-port capacitor structure according to  claim 1 , further comprising:
 at least a fifth electrode plate, disposed outside the first electrode plate and the second electrode plate, wherein the first electrode plate, the second electrode plate and the fifth electrode plate locate on the same plane; and   at least a second interconnection for electrically connecting the third electrode plate and the fifth electrode plate.   
     
     
         4 . The dual-port capacitor structure according to  claim 1 , further comprising:
 at least a sixth electrode plate, disposed outside the first electrode plate and the second electrode plate, wherein the first electrode plate, the second electrode plate and the sixth electrode plate locate on the same plane.   
     
     
         5 . The dual-port capacitor structure according to  claim 1 , wherein the dual-port capacitor structure is applicable to a multilayer substrate, wherein the dual-port capacitor structure is located on a surface layer of the multilayer substrate or is embedded in the multilayer substrate;
 the material of the multilayer substrate comprises polyimide, BT resin polymer, glass fiber, material with high dielectric coefficient, aluminium oxide, LTCC (low-temperature cofired ceramics) and ceramic material;   the dual-port capacitor structure is applicable to printed circuit board (PCB) field, integrated circuit (IC) substrate field, integrated circuit (IC) process field and LTCC (low-temperature cofired ceramics) process field.