Semiconductor laser apparatus

Abstract

A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.

1 - 23 . (canceled) 
     
     
         24 . A semiconductor laser apparatus comprising:
 an electrically conducting package;   an electrically conducting mount provided on said package;   first and second terminals that are provided on said package and isolated from said package; and   first and second semiconductor laser devices that are provided on said mount, each having a first electrode and a second electrode, wherein   said first semiconductor laser device is provided on said second semiconductor laser device,   said first terminal and said second terminal are arranged along a first direction,   said first terminal and said first electrode of said first semiconductor laser device are connected through a first wire,   said first semiconductor laser device has a first emission point and said second semiconductor laser device has a second emission point,   said second semiconductor laser device has a first surface and an insulating film formed on said first surface excluding a region of said first surface corresponding to said second emission point, and   said first electrode of said first semiconductor laser device is formed to protrude from a region between said first semiconductor laser device and said insulating film to a region on an opposite side to said region corresponding to said second emission point, and said first wire is bonded to said protruding portion of said first electrode of said first semiconductor laser device,   said first electrode of said second semiconductor laser device is formed at least in said region corresponding to said second emission point,   said first electrode of said first semiconductor laser device is formed on said insulating film on one side of said second emission point, and   said first emission point is arranged in a region on said one side of said region corresponding to said second emission point.   
     
     
         25 . The semiconductor laser apparatus according to  claim 24 , wherein
 said second terminal and said first electrode of said second semiconductor laser device are connected through a second wire.   
     
     
         26 . The semiconductor laser apparatus according to  claim 24 , wherein
 said second terminal and said first electrode of said second semiconductor laser device are connected through a second wire through a space above said region corresponding to said second emission point and above a region on said second semiconductor laser device on an opposite side to a region where said first semiconductor laser device is formed relative to said region corresponding to said second emission point.   
     
     
         27 . The semiconductor laser apparatus according to  claim 24 , wherein
 said first terminal and said second terminal are arranged along the first direction that is substantially parallel to a semiconductor laser mounting surface of said mount.   
     
     
         28 . The semiconductor laser apparatus according to  claim 24 , wherein
 said first semiconductor laser device is located closer to said first terminal than said second terminal on said second semiconductor laser device.   
     
     
         29 . The semiconductor laser apparatus according to  claim 24 , wherein
 said second semiconductor laser device includes an active layer composed of a nitride-based semiconductor.   
     
     
         30 . The semiconductor laser apparatus according to  claim 24 , wherein
 at least one of said second electrodes of said first and second semiconductor laser devices is electrically connected to said mount through a wire on the mount side.