Inventor · disambiguated record
Daijiro Inoue
Also filed as: INOUE DAIJIRO
26 granted patents·12 pending applications·118 citations·filing 1990–2011
95Inventor score
Top patents by PatentIndex Score
38 records- 0196US6977953B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2002·Granted Dec 20, 2005·50 cites·56 claims
- 0288US7655953B2Semiconductor laser apparatusSANYO ELECTRIC CO·Filed 2005·Granted Feb 2, 2010·8 cites·9 claims
- 0380US7116693B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Oct 3, 2006·4 cites·16 claims
- 0472US7450622B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Granted Nov 11, 2008·2 cites·9 claims
- 0571US7773654B2Semiconductor laser apparatus and fabrication method thereofSANYO ELECTRIC CO·Filed 2005·Granted Aug 10, 2010·5 cites·17 claims
- 0670US7372077B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted May 13, 2008·9 cites·24 claims
- 0767US7561610B2Semiconductor laser apparatus and optical apparatusSANYO ELECTRIC CO·Filed 2005·Granted Jul 14, 2009·3 cites·16 claims
- 0866US7589357B2Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Granted Sep 15, 2009·1 cites·3 claims
- 0963US7260130B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2004·Granted Aug 21, 2007·6 cites·21 claims
- 1062US7903709B2Semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Granted Mar 8, 2011·1 cites·10 claims
- 1160US7088755B2Nitride-base semiconductor laser deviceSANYO ELECTRIC CO·Filed 2003·Granted Aug 8, 2006·5 cites·11 claims
- 1259US6771676B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2002·Granted Aug 3, 2004·5 cites·16 claims
- 1354US8098699B2Semiconductor laser apparatus and optical apparatusINOUE DAIJIRO·Filed 2009·Granted Jan 17, 2012·1 cites·6 claims
- 1454US7881356B2Semiconductor laser apparatus and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2008·Granted Feb 1, 2011·0 cites·15 claims
- 1554US7485902B2Nitride-based semiconductor light-emitting deviceSANYO ELECTRIC CO·Filed 2003·Granted Feb 3, 2009·5 cites·22 claims
- 1654US6768755B2Semiconductor laser deviceSANYO ELECTRIC CO·Filed 2000·Granted Jul 27, 2004·3 cites·25 claims
- 1754US2009238230A1Semiconductor laser apparatusSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1853US8101465B2Method of fabricating a semiconductor device with a back electrodeHATA MASAYUKI·Filed 2007·Granted Jan 24, 2012·0 cites·10 claims
- 1953US7209505B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2006·Granted Apr 24, 2007·0 cites·3 claims
- 2053US2010080000A1Laser diode device and display apparatusSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 2151US6778575B2AlGaInP-based high-output red semiconductor laser deviceSANYO ELECTRIC CO·Filed 2002·Granted Aug 17, 2004·2 cites·15 claims
- 2251US2012108011A1Method of fabricating a semiconductor device with a back electrodeHATA MASAYUKI·Filed 2011·Application pending·0 cites
- 2350US6654397B2Semiconductor laser device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2001·Granted Nov 25, 2003·2 cites·20 claims
- 2448US7551659B2Semiconductor laser apparatusSANYO ELECTRIC CO·Filed 2005·Granted Jun 23, 2009·0 cites·21 claims
- 2548US7535945B2Semiconductor laser apparatus and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2005·Granted May 19, 2009·0 cites·19 claims
- 2648US2010067559A1Laser diode device, optical apparatus and display apparatusSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 2747US8017957B2Semiconductor laser apparatusSANYO ELECTRIC CO·Filed 2010·Granted Sep 13, 2011·0 cites·8 claims
- 2847US2007274359A1Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 2947US2012033702A1Semiconductor laser apparatusBESSHO YASUYUKI·Filed 2011·Application pending·0 cites
- 3046US2005218420A1Semiconductor laser apparatus and fabrication method thereofSANYO ELECTRIC CO·Filed 2005·Application pending·0 cites
- 3146US2009323750A1Semiconductor laser device and method of manufacturing the same as well as optical pickupSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 3245US2010260227A1Semiconductor laser apparatus and fabrication method thereofSANYO ELECTRIC CO·Filed 2010·Application pending·0 cites
- 3344US8193016B2Semiconductor laser device and method of manufacturing the sameHIROYAMA RYOJI·Filed 2011·Granted Jun 5, 2012·0 cites·13 claims
- 3444US2009262771A1Semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 3544US2007274360A1Semiconductor laser element and semiconductor laser deviceSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 3639US2006011946A1Nitride semiconductor laser elementTODA TADAO·Filed 2003·Application pending·0 cites
- 3736US5982023ASemiconductor device and field effect transistorSANYO ELECTRIC CO·Filed 1997·Granted Nov 9, 1999·5 cites·24 claims
- 3829US5225895AVelocity-modulation transistor with quantum well wire layerSANYO ELECTRIC CO·Filed 1990·Granted Jul 6, 1993·1 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →