Method of fabricating a semiconductor device with a back electrode

Abstract

A semiconductor device capable of stabilizing operations thereof is provided. This semiconductor device comprises a substrate provided with a region having concentrated dislocations at least on part of the back surface thereof, a semiconductor element layer formed on the front surface of the substrate, an insulator film formed on the region of the back surface of the substrate having concentrated dislocations and a back electrode formed to be in contact with a region of the back surface of the substrate other than the region having concentrated dislocations.

1 - 29 . (canceled) 
     
     
         30 . A method of fabricating a semiconductor device with a back electrode, the method comprising the steps of:
 forming a semiconductor element layer on a first surface of a substrate, said substrate having a second surface comprising plurality of dislocation regions;   forming a pair of scribing lines on said first surface of said substrate, said scribe lines formed such that a first said dislocation region is between said scribing lines; and   separating said semiconductor element layer and said substrate along said scribing lines, thereby removing a portion of said substrate including said first dislocation region.   
     
     
         31 . A method of fabricating a semiconductor device according to  claim 30 , wherein
 said portion has a substantially identical width of said second surface and said first surface of said semiconductor element layer.   
     
     
         32 . A method of fabricating a semiconductor device according to  claim 30 , wherein
 said substrate includes a nitride-based semiconductor substrate.   
     
     
         33 . A method of fabricating a semiconductor device according to  claim 30 , wherein
 said step of separating said substrate and said semiconductor element layer includes a step of cleaving said substrate and said semiconductor element layer.   
     
     
         34 . A method of fabricating a semiconductor device according to  claim 30 , wherein
 said scribing lines are formed on a side of a front surface of said semiconductor element layer.