Composition for forming resist underlayer film for euv lithography

Abstract

There is provided a compositions of resist underlayer films for EUV lithography that is used in a production process of devices employing EUV lithography, that reduces adverse effects caused by EUV, and that has a beneficial effect on the formation of a favorable resist pattern; and a method for forming resist patterns using the composition of resist underlayer films for EUV lithography. A composition for forming a resist underlayer film for an EUV lithography process used in production of a semiconductor device, comprising a novolac resin containing a halogen atom. The novolac resin may include a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination thereof. The halogen atom may be a bromine atom or an iodine atom. The novolac resin may be a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid; or a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid.

1 . A composition for forming a resist underlayer film for an EUV lithography process used in production of a semiconductor device, the composition comprising: a novolac resin containing a halogen atom. 
     
     
         2 . The composition for forming a resist underlayer film according to  claim 1 , wherein the novolac resin containing a halogen atom includes a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination of an epoxy group and a hydroxy group. 
     
     
         3 . The composition for forming a resist underlayer film according to  claim 1 , wherein the halogen atom is a bromine atom or an iodine atom. 
     
     
         4 . The composition for forming a resist underlayer film according to  claim 1 , wherein the novolac resin containing a halogen atom is a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid. 
     
     
         5 . The composition for forming a resist underlayer film according to  claim 1 , wherein the novolac resin containing a halogen atom is a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid. 
     
     
         6 . The composition for forming a resist underlayer film according to  claim 1 , wherein the composition includes the novolac resin containing a halogen atom, a cross-linking agent, a cross-linking catalyst, and a solvent. 
     
     
         7 . The composition for forming a resist underlayer film according to  claim 1 , further comprising an acid generator. 
     
     
         8 . The composition for forming a resist underlayer film according to  claim 1 , wherein the novolac resin containing a halogen atom is a novolac resin having a weight average molecular weight of 1,000 to 100,000. 
     
     
         9 . A resist underlayer film for an EUV lithography process used in production of a semiconductor device, obtained by applying the composition for forming a resist underlayer film as claimed in  claim 1  onto a substrate and baking the composition. 
     
     
         10 . A method for producing a semiconductor device comprising the steps of:
 applying the composition for forming a resist underlayer film for EUV lithography as claimed in  claim 1  onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and   applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.