Optoelectronic architecture having compound conducting substrate

Abstract

Optoelectronic device modules, arrays optoelectronic device modules and methods for fabricating optoelectronic device modules are disclosed. The device modules are made using a starting substrate having an insulator layer sandwiched between a bottom electrode made of a flexible bulk conductor and a conductive back plane. An active layer is disposed between the bottom electrode and a transparent conducting layer. One or more electrical contacts between the transparent conducting layer and the back plane are formed through the transparent conducting layer, the active layer, the flexible bulk conductor and the insulating layer. The electrical contacts are electrically isolated from the active layer, the bottom electrode and the insulating layer.

What is claimed is: 
     
         1 . A method of manufacturing a photovoltaic cell comprising; providing at least two solar cells, each of the at least two solar cells having a top illuminating surface; and electrically interconnecting the at least two solar cells, wherein each of the cells are formed by laminating a first metal foil with in an offset manner to a second metal foil, wherein the offset manner positions a portion of the second metal foil to extend beyond at least one edge of a perimeter the first metal foil; wherein the first metal foil comprises a plurality of layers stacked thereon, including a photovoltaic absorber layer thereon, wherein with the first metal foil of one cell is not in direct electrical contact with the second metal foil of the same cell. 
     
     
         2 . The method of  claim 1  wherein electrically coupling comprises welding the first foil to the second foil. 
     
     
         3 . The method of  claim 2  the first foil includes a plurality of vias configured so there is no direct electrical contact between the first foil and material to be deposited in the via. 
     
     
         4 . The method of  claim 3  wherein welding comprises at least one of the following: spot welding, laser welding, or ultrasonic welding. 
     
     
         5 . The method of  claim 3  wherein the bottom electrode is a first metal foil. 
     
     
         6 . The method of  claim 5  wherein the insulating layer is an anodized surface of the first metal foil. 
     
     
         7 . The method of  claim 6  wherein the first metal foil is an aluminum foil, a stainless steel foil, a copper foil, a titanium foil or a molybdenum foil. 
     
     
         8 . The method of  claim 5  wherein the first metal foil is between about 1 micron thick and about 200 microns thick. 
     
     
         9 . The method of  claim 5  wherein the first metal foil is between about 25 microns thick and about 50 microns thick. 
     
     
         10 . The method of  claim 3  wherein the conductive back plane is a conductive grid. 
     
     
         11 . The method of  claim 3  wherein the conductive back plane is a second metal foil. 
     
     
         12 . The method of  claim 3  wherein the insulating layer is an anodized surface of the first and/or second metal foil. 
     
     
         13 . The method of  claim 3  wherein the insulating layer is laminated between the first and second metal foils. 
     
     
         14 . The method of  claim 3  wherein the electrically conductive material comprises a plug made of an electrically conductive material that at least substantially fills the channel and makes electrical contact between a transparent conducting layer on the first metal foil and a conductive back plane on the first metal foil. 
     
     
         15 . The method of  claim 3  wherein each of the vias is between about 0.1 millimeters in diameter and about 1.5 millimeters in diameter. 
     
     
         16 . The method of  claim 3  wherein each of the vias is between about 0.5 millimeters in diameter and about 1 millimeter in diameter. 
     
     
         17 . The method of the  claim 14  wherein the plug is between about 25 microns in diameter and about 100 microns in diameter. 
     
     
         18 . The method of  claim 3  wherein a pitch between adjacent vias is between about 0.2 centimeters and about 2 centimeters. 
     
     
         19 . The method of  claim 3  further comprising one or more conductive traces disposed on the transparent conducting layer in electrical contact with the electrically conductive material in the vias. 
     
     
         20 . The device module of  claim 19  wherein the one or more conductive traces form a pattern in which the one or more conductive traces radiate outward from one or more of the vias.