Semiconductor device and manufacturing method of the same

Abstract

Performance of a semiconductor device having a MIS transistor is improved. A semiconductor device includes: a pair of source/drain regions each formed by stacking a semiconductor layer on a main surface of a silicon substrate; a sidewall insulating film covering each sidewall of the source/drain regions; a gate electrode arranged so as to interpose a gate insulating film on the main surface of the silicon substrate at a position sandwiched by the sidewall insulating films in a plane; and extension regions formed to extend from a portion below and lateral to the gate electrode to a portion below and lateral to each of the source/drain regions, wherein a sidewall of the sidewall insulating film being adjacent to the gate insulating film and the gate electrode has an inclination of a forward tapered shape.

1 - 20 . (canceled) 
     
     
         21 . A semiconductor device, comprising:
 a semiconductor substrate;   a first semiconductor layer of a first conductive type formed over the semiconductor substrate;
 a second semiconductor layer of the first conductive type formed over the semiconductor substrate; 
   a gate insulating film formed over the semiconductor substrate;   a gate electrode formed over the gate insulating film;   a first sidewall insulating film formed over the semiconductor substrate and between the gate electrode and the first semiconductor layer; and
 a second sidewall insulating film formed over the semiconductor substrate and between the gate electrode and the second semiconductor layer, 
   wherein the first semiconductor layer has a first inclination portion with an inclination toward the semiconductor substrate,   wherein the second semiconductor layer has a second inclination portion with an inclination toward the semiconductor substrate,   wherein the first sidewall insulating film is formed over the first inclination portion and has a third inclination portion with an inclination toward the semiconductor substrate,   wherein the second sidewall insulating film is formed over the second inclination portion and has a fourth inclination portion with an inclination toward the semiconductor substrate, and   wherein the gate electrode is formed over the third and fourth inclination portions.   
     
     
         22 . A semiconductor device according to  claim 21 ,
 wherein the gate insulating film includes a tantalum oxide film, a titanium oxide film, an aluminum oxide film, a hafnium oxide film or a hafnium silicon oxynitride film.   
     
     
         23 . A semiconductor device according to  claim 22 ,
 wherein the gate electrode includes a titanium nitride film, a molybdenum nitride film or a hafnium silicide film.   
     
     
         24 . A semiconductor device according to  claim 23 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of silicon.   
     
     
         25 . A semiconductor device according to  claim 23 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of a mixed crystal of silicon and germanium.   
     
     
         26 . A semiconductor device according to  claim 21 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of silicon.   
     
     
         27 . A semiconductor device according to  claim 21 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of a mixed crystal of silicon and germanium.   
     
     
         28 . A semiconductor device according to  claim 21 ,
 wherein the gate electrode is formed over the first and second inclination portions via the first sidewall insulating film and the second sidewall insulating film.   
     
     
         29 . A semiconductor device, comprising:
 a semiconductor substrate;   a first semiconductor layer of a first conductive type formed over the semiconductor substrate;
 a second semiconductor layer of the first conductive type formed over the semiconductor substrate; 
   a gate insulating film formed over the semiconductor substrate;   a gate electrode formed over the gate insulating film;   a first sidewall insulating film formed over the semiconductor substrate and between the gate electrode and the first semiconductor layer; and
 a second sidewall insulating film formed over the semiconductor substrate and between the gate electrode and the second semiconductor layer, 
   wherein the first semiconductor layer has a first inclination portion with an inclination toward the semiconductor substrate,
 wherein the second semiconductor layer has a second inclination portion with an inclination toward the semiconductor substrate, 
 wherein the first sidewall insulating film is formed over the first inclination portion and has a third inclination portion with an inclination toward the semiconductor substrate, 
   wherein the second sidewall insulating film is formed over the second inclination portion and has a fourth inclination portion with an inclination toward the semiconductor substrate,   wherein the gate insulating film is formed over the third and fourth inclination portions, and
 wherein the gate electrode is formed over the third and fourth inclination portions via the gate insulating film. 
   
     
     
         30 . A semiconductor device according to  claim 29 ,
 wherein the gate insulating film includes a tantalum oxide film, a titanium oxide film, an aluminum oxide film, a hafnium oxide film or a hafnium silicon oxynitride film.   
     
     
         31 . A semiconductor device according to  claim 30 ,
 wherein the gate electrode includes a titanium nitride film, a molybdenum nitride film or a hafnium silicide film.   
     
     
         32 . A semiconductor device according to  claim 31 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of silicon.   
     
     
         33 . A semiconductor device according to  claim 31 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of a mixed crystal of silicon and germanium.   
     
     
         34 . A semiconductor device according to  claim 29 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of silicon.   
     
     
         35 . A semiconductor device according to  claim 29 ,
 wherein the first and second semiconductor layers are formed by an epitaxial growth method and are made of a mixed crystal of silicon and germanium.   
     
     
         36 . A semiconductor device according to  claim 29 ,
 wherein the gate electrode is formed over the first and second inclination portions via the gate insulating film, the first sidewall insulating film and the second sidewall insulating film.   
     
     
         37 . A semiconductor device according to  claim 21 ,
 wherein the third and fourth inclination portions are curved.   
     
     
         38 . A semiconductor device according to  claim 29 ,
 wherein the third and fourth inclination portions are curved.