Dicing die bond film

Abstract

The present invention provides a dicing die bond film in which peeling electrification hardly occurs and which has good tackiness and workability. The dicing die bond film of the present invention is a dicing die bond film including a dicing film and a thermosetting type die bond film provided thereon, wherein the thermosetting type die bond film contains conductive particles, the volume resistivity of the thermosetting type die bond film is 1×10 −6 Ω·cm or more and 1×10 −3 Ω·cm or less, and the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.

1 . A dicing die bond film comprising a dicing film and a thermosetting type die bond film provided thereon, wherein
 the thermosetting type die bond film contains conductive particles,   the volume resistivity of the thermosetting type die bond film is 1×10 −6  Ω·cm or more and 1×10 −3  Ω·cm or less, and   the tensile storage modulus of the thermosetting type die bond film at −20° C. before thermal curing is 0.1 to 10 GPa.   
     
     
         2 . The dicing die bond film according to  claim 1 , wherein
 the conductive particles are two kinds or more of conductive particles having different average particle sizes, and   each kind of the conductive particles has an average particle size of 0.01 μm or more and 10 μm or less.   
     
     
         3 . The dicing die bond film according to  claim 1 , wherein
 the content of the conductive particles is 20 to 90 parts by weight relative to 100 parts by weight of an organic component of the thermosetting type die bond film.   
     
     
         4 . The dicing die bond film according to  claim 1 , wherein
 a semiconductor chip with a die bond film is formed by forming a modified region on a semiconductor wafer by irradiating the semiconductor wafer with a laser beam, pasting the semiconductor wafer to the dicing die bond film, and breaking the semiconductor wafer at the modified region and simultaneously breaking the thermosetting type die bond film that configures the dicing die bond film at a position that corresponds to the modified region by applying a tensile force to the dicing die bond film, the obtained semiconductor chip with the die bond film is peeled from the dicing film, and the peeled semiconductor chip with the die bond film is used in a method of fixing the peeled semiconductor chip with the die bond film to an adherend with the die bond film interposed therebetween.   
     
     
         5 . The dicing die bond film according to  claim 1 , wherein
 a semiconductor chip with a die bond film is formed by forming grooves on a surface of a semiconductor wafer, exposing the grooves by performing backside grinding, pasting the dicing die bond film to the surface of the semiconductor wafer where the grooves are exposed, and breaking the thermosetting type die bond film that configures the dicing die bond film at a position that corresponds to the grooves by applying a tensile force to the dicing die bond film, the obtained semiconductor chip with the die bond film is peeled from the dicing film, and the peeled semiconductor chip with the die bond film is used in a method of fixing the peeled semiconductor chip to an adherend with the die bond film interposed therebetween.   
     
     
         6 . The dicing die bond film according to  claim 1 , wherein
 the conductive particles are of at least one kind selected from the group consisting of nickel particles, copper particles, silver particles, aluminum particles, gold particles, stainless steel particles, carbon black, carbon nanotubes, metal particles obtained by plating a surface of a metal with another metal, and resin particles of which surface is coated with a metal.   
     
     
         7 . The dicing die bond film according to  claim 1  wherein
 the thermosetting type die bond film contains an acrylic resin as a thermoplastic resin. 
 
     
     
         8 . A method of forming a semiconductor chip, comprising
 providing the dicing die bond film according to  claim 1 ;   providing a semiconductor wafer on which a modified region has been formed by irradiating the semiconductor wafer with a laser beam;   pasting the semiconductor wafer to the dicing die bond film; and   breaking the semiconductor wafer at the modified region and simultaneously breaking the thermosetting type die bond film that configures the dicing die bond film at a position that corresponds to the modified region by applying a tensile force to the dicing die bond film.   
     
     
         9 . The method of  claim 8 , further comprising
 peeling the obtained semiconductor chip with the die bond film from the dicing film.   
     
     
         10 . The method of  claim 9 , further comprising
 fixing the peeled semiconductor chip with the die bond film to an adherend with the die bond film interposed therebetween.   
     
     
         11 . A method of forming a semiconductor chip, comprising
 providing the dicing die bond film according to  claim 1 ;   providing a semiconductor wafer, the surface of which has been modified by forming thereon and then exposing the grooves by performing backside grinding;   pasting the semiconductor wafer to the dicing die bond film; and   breaking the thermosetting type die bond film that configures the dicing die bond film at a position that corresponds to the grooves by applying a tensile force to the dicing die bond film.   
     
     
         12 . The method of  claim 11 , further comprising
 peeling the obtained semiconductor chip with the die bond film from the dicing film.   
     
     
         13 . The method of  claim 12 , further comprising
 fixing the peeled semiconductor chip with the die bond film to an adherend with the die bond film interposed therebetween.   
     
     
         14 . A semiconductor chip prepared according to the method of  claim 8 . 
     
     
         15 . A semiconductor chip prepared according to the method of  claim 11 .