Systems and Methods for Forming Metal Oxide Layers

Abstract

A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

1 - 31 . (canceled) 
     
     
         32 . An atomic layer vapor deposition apparatus comprising:
 a deposition chamber having a substrate positioned therein;   one or more vessels comprising at least one precursor compound of the formula Si(NR 1 R 2 ) x Z y , wherein:
 R 1  and R 2  are each independently hydrogen or an organic group; 
 Z is Cl or H; 
 x is 1 to 4; and 
 y is 0 to 4; and 
   one or more sources of ozone.   
     
     
         33 - 41 . (canceled) 
     
     
         42 . An atomic layer vapor deposition system comprising:
 one or more vessels comprising at least one precursor compound of the formula Si(NR 1 R 2 ) x Z y , wherein:
 R 1  and R 2  are each independently hydrogen or an organic group; 
 Z is Cl or H; 
 x is 1 to 4; and 
 y is 0 to 4; and 
   one or more sources of ozone.   
     
     
         43 . The system of  claim 42  wherein R 1  and R 2  are each independently hydrogen or organic groups having 1-10 carbon atoms. 
     
     
         44 . The system of  claim 42  wherein R 1  and R 2  are each independently organic groups having silicon substituted for one or more carbon atoms. 
     
     
         45 . The system of  claim 42  wherein y is 0 and x is 4, thereby providing at least one precursor compound of the formula Si(NR 1 R 2 ) 4 . 
     
     
         46 . The system of  claim 42  wherein R 1  and R 2  are each independently hydrogen or a (C1-C8)alkyl moiety. 
     
     
         47 . The system of  claim 42  wherein R 1  and R 2  are each independently selected from the group consisting of methyl and ethyl moieties. 
     
     
         48 - 53 . (canceled) 
     
     
         54 . The system of  claim 32  wherein R 1  and R 2  are each independently hydrogen or organic groups having 1-10 carbon atoms. 
     
     
         55 . The system of  claim 32  wherein R 1  and R 2  are each independently organic groups having silicon substituted for one or more carbon atoms. 
     
     
         56 . The system of  claim 32  wherein y is 0 and x is 4, thereby providing at least one precursor compound of the formula Si(NR 1 R 2 ) 4 . 
     
     
         57 . The system of  claim 32  wherein R 1  and R 2  are each independently hydrogen or a (C1-C8)alkyl moiety. 
     
     
         58 . The system of  claim 32  wherein R 1  and R 2  are each independently selected from the group consisting of methyl and ethyl moieties.