Apparatus and method of processing substrate

Abstract

According to one embodiment, an apparatus of processing a substrate includes a treatment chamber, a holder, a feed device, and a temperature control device. The holder is provided in the treatment chamber and is configured to rotatably hold the substrate. The feed device includes a nozzle configured to eject an etching solution to a surface of the substrate held by the holder. The temperature control device includes first and second devices, and a controller. The first device is configured to heat and/or cool an atmosphere inside the treatment chamber. The second device is configured to heat and/or cool the etching solution. The controller is configured to control operation of the first and second devices such that a temperature of the atmosphere is higher than that of the etching solution in the nozzle and that difference between the temperature of the atmosphere and that of the etching solution is maintained constant.

What is claimed is: 
     
         1 . An apparatus of processing a substrate comprising first and second surfaces, comprising:
 a treatment chamber;   a holder provided in the treatment chamber, the holder being configured to rotatably hold the substrate;   a first feed device comprising a first nozzle configured to eject an etching solution to the first surface of the substrate held by the holder; and   a temperature control device comprising
 a first device configured to heat and/or cool an atmosphere inside the treatment chamber, 
 a second device configured to heat and/or cool the etching solution, and 
 a controller configured to control operation of the first and second devices such that a temperature of the atmosphere is higher than a temperature of the etching solution in the first nozzle and that difference between the temperature of the atmosphere and the temperature of the etching solution is maintained constant. 
   
     
     
         2 . The apparatus according to  claim 1 , further comprising a humidifier configured to humidify the atmosphere. 
     
     
         3 . The apparatus according to  claim 1 , further comprising a second feed device comprising a second nozzle configured to eject a rinse solution to the first surface of the substrate held by the holder, wherein
 the temperature control device further comprises a third device configured to heat and/or cool the rinse solution, and   the controller is further configured to control operation of the third device such that the temperature of the rinse solution in the second nozzle is equal to or higher than the temperature of the etching solution in the first nozzle.   
     
     
         4 . The apparatus according to  claim 1 , further comprising a blower configured to blow dry gas to the substrate held by the holder. 
     
     
         5 . The apparatus according to  claim 1 , wherein
 the first feed device further comprises a third nozzle configured to eject the etching solution to the second surface of the substrate held by the holder, and   the controller is further configured to control operation of the first and second devices such that the temperature of the atmosphere is higher than the temperature of the etching solution in the third nozzle and that difference between the temperature of the atmosphere and the temperature of the etching solution is maintained constant.   
     
     
         6 . The apparatus according to  claim 5 , further comprising a second feed device comprising a fourth nozzle configured to eject a rinse solution to the second surface of the substrate held by the holder, wherein
 the temperature control device further comprises a third device configured to heat and/or cool the rinse solution, and   the controller is further configured to control operation of the third device such that a temperature of the rinse solution in the fourth nozzle is equal to or higher than the temperature of the etching solution in the third nozzle.   
     
     
         7 . The apparatus according to  claim 1 , wherein the first feed device further comprises a tank configured to contain the etching solution, and a conduit configured to guide the etching solution inside the tank to the first nozzle, wherein
 the second device is configured to heat and/or cool the etching solution inside the tank.   
     
     
         8 . An apparatus of processing a substrate comprising first and second surfaces, comprising:
 a treatment chamber;   a holder provided in the treatment chamber, the holder being configured to rotatably hold the substrate;   a first feed device comprising a first nozzle configured to eject an etching solution to the first surface of the substrate held by the holder; and   a temperature control device comprising
 a shielding member placed such that the shielding member is opposed to the first surface of the substrate and forms a space having a layer shape between the first surface and the shielding member, the shielding member comprising a first device configured to heat and/or cool gas in the space, 
 a second device configured to heat and/or cool the etching solution, and 
 a controller configured to control operation of the first and second devices such that a temperature of the gas is equal to or higher than a temperature of the etching solution in the nozzle. 
   
     
     
         9 . A method of processing a substrate comprising first and second surfaces in a treatment chamber, comprising:
 at least partially etching the first surface by supplying an etching solution to the first surface with rotating the substrate; and   controlling a temperature of the etching solution and a temperature of an atmosphere inside the treatment chamber such that the temperature of the atmosphere is higher than the temperature of the etching solution and that difference between the temperature of the etching solution and the temperature of the atmosphere is maintained constant.   
     
     
         10 . The method according to  claim 9 , further comprising humidifying the atmosphere during the etching. 
     
     
         11 . The method according to  claim 9 , further comprising rinsing the first surface of the substrate with a rinse solution after the etching, wherein the rinsing is performed under condition that a temperature of the rinse solution is equal to or higher than the temperature of the etching solution. 
     
     
         12 . The method according to  claim 11 , further comprising blowing dry gas to the substrate after the rinsing. 
     
     
         13 . The method according to  claim 9 , further comprising:
 supplying the etching solution to the second surface during the etching; and   controlling the temperature of the etching solution and the temperature of the atmosphere such that the temperature of the atmosphere is higher than the temperature of the etching solution supplied to the second surface and that difference between the temperature of the atmosphere and the temperature of the etching solution is maintained constant.   
     
     
         14 . The method according to  claim 13 , further comprising rinsing the second surface of the substrate with the rinse solution after the etching, wherein
 the rinsing is performed under condition that a temperature of the rinse solution is equal to or higher than the temperature of the etching solution supplied to the second surface.