Deposition of ternary oxide films containing ruthenium and alkali earth metals

Abstract

Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal.

What is claimed is: 
     
         1 . A method for forming a ternary oxide film on one or more substrates; comprising:
 a) providing at least one substrate disposed in a reactor;   b) introducing a ruthenium precursor in vapor form into the reactor; wherein the ruthenium precursor is selected from the group consisting of: ruthenium tetraoxide; ruthenium(ethylcyclopentadienyl) 2 ; ruthenium(CO) 3 (1-methyl-1,4-cyclohexadiene); (ethylcyclopentadienyl)ruthenium(dimethylpentadienyl); and ruthenium(toluene)(1,4-cyclohexadiene);   c) introducing an alkali earth metal precursor in vapor form into the reactor; wherein the alkali earth metal precursor is selected from the group consisting of Ca(iPr 3 Cp) 2 (THF) z ; Sr(iPr 3 Cp) 2 (THF) z ; Ba(iPr 3 Cp) 2 (THF) z ; Ca(iPr 3 Cp) 2 (DME) z ; Sr(iPr 3 Cp) 2 (DME) z ; Ba(iPr 3 Cp) 2 (DME) z ; Ca(iPr 3 Cp) 2 , Sr(iPr 3 Cp) 2 , Ba(iPr 3 Cp) 2 , Ca(tBu 3 Cp) 2 (THF) z ; Sr(tBu 3 Cp) 2 (THF) z ; Ba(tBu 3 Cp) 2 (THF) z ; Ca(tBu 3 Cp) 2 (DME) z ; Sr(tBu 3 Cp) 2 (DME) z ; Ba(tBu 3 Cp) 2 (DME) z ; Ca(tBu 3 CP) 2 , Sr(tBu 3 Cp) 2 , and Ba(tBu 3 Cp) 2 ; and wherein 0≦z≦3   d) depositing through an atomic layer deposition (ALD) process at least part of the ruthenium and alkali earth metal precursors to form a ternary oxide film on at least one of the substrates.   
     
     
         2 . The method of  claim 1 , wherein the alkali earth metal precursor has a melting point of less than about 100° C. 
     
     
         3 . The method of  claim 4 , wherein the alkali earth metal precursor is a liquid at about 25° C. 
     
     
         4 . The method of  claim 1 , wherein the alkali earth metal precursor or the ruthenium precursor is initially supplied dissolved in a solvent, wherein the solvent has a boiling point greater than the melting point of the precursor dissolved therein. 
     
     
         5 . The method of  claim 8 , where the solvent has a boiling point greater than about 100° C. 
     
     
         6 . The method of  claim 1 , further comprising introducing an oxygen containing reactant into the reactor; wherein the reactant comprises at least one member selected from: O 2 ; O 3 ; H 2 O; H 2 O 2 ; N 2 O; NO; NO 2 ; and mixtures thereof. 
     
     
         7 . The method of  claim 1 , further comprising depositing the precursors to form the ternary oxide film through either a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. 
     
     
         8 . The method of  claim 7 , wherein the deposition process is performed at temperature between about 100° C. and about 500° C. 
     
     
         9 . The method of  claim 8 , further comprising post-treating the ternary film in oxidizing atmosphere, wherein the post treating occurs at a temperature higher than that of the deposition process.