Growth of reduced dislocation density non-polar gallium nitride

Abstract

Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

1 . A semiconductor film, comprising a non-polar III-nitride film grown on a patterned substrate. 
     
     
         2 . The film of  claim 1 , wherein the non-polar III-nitride film has a wing region and a window region. 
     
     
         3 . The film of  claim 2 , wherein the wing region comprises a Ga face wing region and N face wing region. 
     
     
         4 . The film of  claim 3 , wherein the Ga face wing region has a lower level of defects than the N face wing region. 
     
     
         5 . The film of  claim 4 , wherein the defects comprise a dislocation density or a stacking faults density. 
     
     
         6 . The film of  claim 4 , wherein the dislocation density of the Ga face wing region is no more than 5×10 6  cm −2 . 
     
     
         7 . The film of  claim 4 , wherein the stacking faults density of the Ga face wing region is no more than 3×10 3  cm −1 . 
     
     
         8 . The film of  claim 2 , wherein the window region comprises sharply vertical sidewalls. 
     
     
         9 . The film of  claim 8 , wherein the sharply vertical sidewalls are {0001} sidewalls. 
     
     
         10 . The film of  claim 9 , wherein the non-polar III-nitride film coalesces at the top of the sharply vertical sidewalls. 
     
     
         11 . The film of  claim 1 , wherein the non-polar III-nitride film is an a-plane planar GaN film. 
     
     
         12 . The film of  claim 1 , wherein the non-polar III-nitride film is an HVPE growth film. 
     
     
         13 . The film of  claim 1 , wherein the patterned substrate is an r-plane sapphire substrate. 
     
     
         14 . The film of  claim 1 , wherein the non-polar III-nitride film has a top surface that is planar and non-polar. 
     
     
         15 . A method of growing a semiconductor film, comprising growing a non-polar III-nitride film on a patterned substrate. 
     
     
         16 . A semiconductor film grown using the method of  claim 15 .