Semiconductor device and method of fabricating the same

Abstract

A semiconductor device fabrication method includes forming a first gate electrode via a first gate insulating film on a P-type semiconductor region formed in a surface portion of a semiconductor substrate; forming a second gate electrode via a second gate insulating film on an N-type semiconductor region formed in the surface portion of the semiconductor substrate; forming a first insulating film; forming a second insulating film; forming a mask having a pattern corresponding to the P-type semiconductor region; etching away the second insulating film by using the mask; removing the mask; and forming a first gate electrode sidewall insulating film and forming a second gate electrode sidewall insulating film.

1 .- 13 . (canceled) 
     
     
         14 . A semiconductor device comprising:
 a first gate insulating film formed on a P-type semiconductor region in a surface portion of a semiconductor substrate;   a first gate electrode formed on said first gate insulating film;   a first gate electrode sidewall insulating film formed on side surfaces of said first gate electrode and said first gate insulating film via an insulating film;   an N-channel transistor having a first source region and a first drain region formed on two sides of a first channel region formed in a surface portion of said P-type semiconductor region below said first gate electrode;   a second gate insulating film formed on an N-type semiconductor region in the surface portion of said semiconductor substrate;   a second gate electrode formed on said second gate insulating film via an interface insulating film;   a second gate electrode sidewall insulating film formed on side surfaces of said second gate electrode, said interface insulating film, and said second gate insulating film; and   a P-channel transistor having a second source region and a second drain region formed on two sides of a second channel region formed in a surface portion of said N-type semiconductor region below said second gate electrode.   
     
     
         15 . A device according to  claim 14 , wherein each of said first gate insulating film and said second gate insulating film is made of a material selected from the group consisting of a hafnium oxide film, a zirconium oxide film, a silicate film of a hafnium oxide film, an aluminate film of a hafnium oxide film, a silicate film of a zirconium oxide film, an aluminate film of a zirconium oxide film, a silicate nitride film of a hafnium oxide film, an aluminate nitride film of a hafnium oxide film, a silicate nitride film of a zirconium oxide film, and an aluminate nitride film of a zirconium oxide film. 
     
     
         16 . A device according to  claim 14 , wherein said interface insulating film is made of a silicon oxide film, and has a film thickness of 2 to 3 nm. 
     
     
         17 . A device according to  claim 14 , wherein said insulating film is made of a silicon nitride film, and has a film thickness of about 2 nm. 
     
     
         18 . A method according to  claim 14 , wherein said first gate electrode sidewall insulating film and said second gate electrode sidewall insulating film are made of a same material.