Devices for methodologies related to wafer carriers

Abstract

Disclosed are systems, devices and methodologies for handling wafers in wafer processing operations through use of wafer carriers. In an example situation, a wafer carrier can be configured as a plate to allow bonding of a wafer thereto to provide support for the wafer during some processing operations. Upon completion of such operations, the processed wafer can be separated from the support plate so as to allow further processing. Various devices and methodologies related to such wafer carriers for efficient handling of wafers are disclosed.

1 . An optically transparent disk for bonding a semiconductor wafer thereto to provide support for the wafer, the disk defining first and second surfaces and having a diameter, the disk formed from a borosilicate material. 
     
     
         2 . The disk of  claim 1  wherein the diameter of the disk is larger than the wafer's diameter by approximately 3% or more. 
     
     
         3 . The disk of  claim 2  wherein the diameter of the disk is larger than the wafer's diameter by approximately 5% or more. 
     
     
         4 . The disk of  claim 3  wherein the diameter of the disk is larger than the wafer's diameter by approximately 10% or more. 
     
     
         5 . The disk of  claim 1  wherein the first and second surfaces are substantially parallel. 
     
     
         6 . The disk of  claim 5  wherein the first and second surfaces are separated by a distance of at least 1000 μm. 
     
     
         7 . The disk of  claim 1  wherein the disk defines a perimeter with first and second corner profiles, at least one of the first and second corner profiles having a curved profile or a chamfered profile to reduce likelihood of chipping. 
     
     
         8 . The disk of  claim 7  wherein the curved profile includes an approximately circular arc shaped profile. 
     
     
         9 . The disk of  claim 7  wherein the chamfered profile is substantially symmetrical with respect to the corner. 
     
     
         10 . An optically transparent disk for bonding a semiconductor wafer thereto to provide support for the wafer, the disk defining first and second surfaces and having a diameter, the disk formed from a material having a thermal coefficient of expansion value in a range of about 10×10 −7 /° C. to about 40×10 −7 /° C. in a temperature range of 0 to 300° C. 
     
     
         11 . The disk of  claim 10  wherein the material includes borosilicate. 
     
     
         12 . An optically transparent disk for bonding a semiconductor wafer thereto to provide support for the wafer, the disk defining first and second surfaces and having a diameter, the disk formed from a material having a Knoop hardness value in a range of about 200 Kg/mm 2  to about 550 Kg/mm 2 . 
     
     
         13 . The disk of  claim 12  wherein the material includes borosilicate. 
     
     
         14 . A carrier plate for bonding a wafer thereto to provide support for the wafer, the plate including first and second surfaces, the plate further including a sidewall that defines a perimeter of the plate, the first surface and the sidewall joined by a first corner, the second surface and the sidewall joined by a second corner, at least one of the first and second corners having a shaped profile dimensioned to reduce likelihood of chipping. 
     
     
         15 . The plate of  claim 14  wherein the shaped profile includes a chamfer profile that joins the sidewall and its corresponding surface. 
     
     
         16 . The plate of  claim 14  wherein the shaped profile includes a curved profile that joins the sidewall and its corresponding surface. 
     
     
         17 . The plate of  claim 16  wherein the curved profile is substantially symmetrical with respect to the sidewall and its corresponding surface. 
     
     
         18 . The plate of  claim 17  wherein the curved profile includes a substantially circular arc profile. 
     
     
         19 . The plate of  claim 14  wherein the plate includes a substantially circular shaped disk. 
     
     
         20 . The plate of  claim 19  wherein the circular disk has a diameter that is larger than the wafer's diameter. 
     
     
         21 . A method for fabricating a wafer carrier plate, the method comprising:
 forming or providing a plate having first and second surfaces, and a sidewall that defines a perimeter of the plate; and   forming at least one shaped corner among first and second corners that join the side wall with the first and second surfaces, respectively, the shaped corner dimensioned to reduce likelihood of chipping.   
     
     
         22 . The method of  claim 21  wherein each of the first and second corners has a substantially right angle profile. 
     
     
         23 . The method of  claim 22  wherein the forming of the at least one shaped corner includes grinding at least one of the first and second right angle corners so as to yield a desired profile of the shaped corner. 
     
     
         24 . The method of  claim 23  wherein the desired profile includes a chamfer profile. 
     
     
         25 . The method of  claim 23  wherein the desired profile includes a curved profile. 
     
     
         26 . The method of  claim 25  wherein the curved profile includes a substantially circular arc shaped profile. 
     
     
         27 . The method of  claim 22  wherein the forming of the at least one shaped corner includes applying heat to the first and second right angle corners so as to form a rounded profile at the perimeter of the plate. 
     
     
         28 . The method of  claim 22  wherein the shaped corner is formed on each of the first and second right angle corners.