Laser release process for very thin si-carrier build

Abstract

A laser release and glass chip removal process for a integrated circuit module avoiding carrier edge cracking is provided.

1 . An article comprising a semi-conductor carrier or device wafer, comprising:
 a semi-conductor substrate having CMOS BEOL, wiring defined thereon;   a glass handler wafer;   a layer of a synthetic resin release adhesive applied to and cured on the semi-conductor substrate, or on the glass handier wafer, or both; wherein the adhesive upon curing; can withstand temperatures of at least 400° C.;   wherein the glass handler wafer is laminated with the adhesive located between the semi-conductor substrate and the glass handler wafer.   
     
     
         2 . The article according to  claim 1 , wherein the glass handler wafer has radiation transmission properties which allow adequate transmission of the selected laser wavelength to effect ablation of the adhesive. 
     
     
         3 . The article according to  claim 1 , wherein the adhesive is a polyimide. 
     
     
         4 . The article according to  claim 1 , wherein the adhesive is coated on either the semi-conductor substrate or the glass handler wafer, and another high temperature stable polymer is coated on the glass handler wafer or on the semi-conductor substrate that has not been coated with the adhesive. 
     
     
         5 . The article according to  claim 1 , wherein the semi-conductor substrate is a silicon-carrier wafer. 
     
     
         6 . An integrated circuit module comprising the article according to  claim 1 , further comprising C4 balls deposited on the semi-conductor substrate; wherein the article is diced to a pre-determined size; and a substrate having the article joined thereon by the C4 balls. 
     
     
         7 . The module of  claim 6 , wherein the carrier wafer has a thickness that corresponds to the thickness of the CMOS BEOL wiring. 
     
     
         8 . The module according to  claim 6 , wherein the carrier wafer has a thickness greater than the CMOS BEOL wiring but less than about 15 μm. 
     
     
         9 . The article of  claim 3 , which further comprises an adhesion promoter between the adhesive and carrier wafer. 
     
     
         10 . The article  claim 9 , of wherein the adhesion promoter comprises a silane. 
     
     
         11 . The article of  claim 9 , wherein the adhesion promoter comprises aminopropyltriethoxy silane. 
     
     
         12 - 23 . (canceled) 
     
     
         24 . The module according, to  claim 6 , which further comprises an underfill comprising epoxy resin and silicon filler.