Group iii nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

Abstract

A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate ( 1 ) is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface ( 3 ) is not more than 2×10 14 , and the number of silicon atoms per square centimeter of the surface ( 3 ) is not more than 3×10 13 ; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface ( 3 ) is not more than 3×10 13 , and a haze level of the surface ( 3 ) is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface ( 3 ) is not more than 2×10 14 , and a haze level of the surface ( 3 ) is not more than 5 ppm.

1 - 26 . (canceled) 
     
     
         27 . A method of manufacturing an epitaxial layer-provided substrate, comprising:
 a substrate preparation step of preparing a GaN substrate; and   a step of forming an epitaxially grown layer on a surface of the GaN substrate prepared by said substrate preparation step,   wherein a number of chlorine atoms per square centimeter of said surface of the GaN substrate is not more than 2×10 14 , and a number of silicon atoms per square centimeter of said surface is not more than 3×10 13 , and said chlorine atoms and said silicon atoms adhere to said surface.   
     
     
         28 . A method of manufacturing a semiconductor device, comprising:
 an epitaxial layer-provided substrate preparation step of performing the method of manufacturing an epitaxial layer-provided substrate according to  claim 27 ; and   a step of forming the semiconductor device by performing an electrode formation step and a processing step on the epitaxial layer-provided substrate obtained by said epitaxial layer-provided substrate preparation step.   
     
     
         29 . A method of manufacturing an epitaxial layer-provided substrate, comprising:
 a substrate preparation step of preparing a GaN substrate; and   a step of forming an epitaxially grown layer on a surface of the GaN substrate prepared by said substrate preparation step,   wherein a number of chlorine atoms per square centimeter of said surface of the GaN substrate is not more than 2×10 14 , and a haze level of said surface is not more than 5 ppm, and said chlorine atoms adhere to said surface.   
     
     
         30 . A method of manufacturing a semiconductor device, comprising:
 an epitaxial layer-provided substrate preparation step of performing the method of manufacturing an epitaxial layer-provided substrate according to  claim 29 ; and   a step of forming the semiconductor device by performing an electrode formation step and a processing step on the epitaxial layer-provided substrate obtained by said epitaxial layer-provided substrate preparation step.