Method for manufacturing light emitting device

Abstract

A method for manufacturing a light emitting device, includes: forming a first multilayer body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; forming a second multilayer body including a second substrate having a thermal expansion coefficient different from a thermal expansion coefficient of the first substrate, and a second metal layer provided on the second substrate; a first bonding step configured to heat the first metal layer and the second metal layer being in contact with each other; removing the first substrate after the first bonding step; and a second bonding step configured to perform, after the removing, heating at a temperature higher than a temperature of the first bonding step.

1 . A light emitting device comprising:
 a semiconductor layer including a light emitting layer, the semiconductor layer having a first surface and a second surface provided on a side opposed to the first surface;   a conductive substrate;   a bonded metal layer including a first Ti film provided on the first surface of the semiconductor layer, a first Pt film provided on the first Ti film, a first Au film provided on the first Pt film, and a solder layer provided between the first Au film and the conductive substrate, the solder layer including one of AuSn, AuGe, AuSi, and In; and   an electrode provided on the second surface of the semiconductor layer.   
     
     
         2 . The light emitting device according to  claim 1 , wherein the bonded metal layer further includes a second Ti film provided on the conductive substrate, a second Pt film provided on the second Ti film and a second Au film provided between the second Pt film and the solder layer. 
     
     
         3 . The light emitting device according to  claim 1 , wherein the conductive substrate includes one of Si, Ge, and SiC. 
     
     
         4 . The light emitting device according to  claim 1 , wherein the light emitting layer InGaAlP In x (Ga y Al 1−y ) 1−x P (0≦x≦1, 0≦y≦1). 
     
     
         5 . The light emitting device according to  claim 1 , wherein the light emitting layer includes In x Ga y Al 1−x−y N (0≦x≦1, 0≦y≦1, x+y≦1). 
     
     
         6 . The light emitting device according to  claim 5 , further comprising:
 a transparent electrode between the bonded metal layer and the semiconductor layer.   
     
     
         7 . The light emitting device according to  claim 1 , wherein a light emitted from the light emitting layer is reflected by the bonded metal layer. 
     
     
         8 . A light emitting device comprising:
 a semiconductor layer having a light emitting layer, the semiconductor layer having a first surface and a second surface provided on a side opposed to the first surface;   a conductive substrate;   a bonded metal layer including a first Ni film provided on the first surface of the semiconductor layer, a first Au film provided in the first Ni film and a solder layer provided between the first Au layer and the conductive substrate, the solder layer including one of AuSn, AuGe, AuSi, and In; and   an electrode provided on the second surface of the semiconductor layer.   
     
     
         9 . The light emitting device according to  claim 8 , wherein the bonded metal layer further includes a second Ti film provided on the conductive substrate, a second Pt film provided on the second Ti film and a second Au film provided between the second Pt film and the solder layer. 
     
     
         10 . The light emitting device according to  claim 8 , wherein the conductive substrate is one of Si, Ge, and SiC. 
     
     
         11 . The light emitting device according to  claim 8 , wherein the light emitting layer is made of InGaAlP In x (Ga y Al 1−y ) 1−x P (0≦x≦1, 0≦y≦1). 
     
     
         12 . The light emitting device according to  claim 8 , wherein the light emitting layer is made of In x Ga y Al 1−x−y N (0≦x≦1, 0≦y≦1, x+y≦1). 
     
     
         13 . The light emitting device according to  claim 12 , further comprising:
 a transparent electrode provided between the bonded metal layer and the semiconductor layer.   
     
     
         14 . The light emitting device according to  claim 8 , wherein a light emitted from the light emitting layer is reflected by the bonded metal layer.