Methods for Isolated Bevel Edge Clean

Abstract

Methods for cleaning an edge of a semiconductor substrate include providing a brush in a housing, the housing provides a volume for holding the brush. A cleaning fluid is inserted into the housing to at least partially fill the volume holding the brush, with the cleaning fluid. The cleaning fluid is removed from the volume of the housing while the cleaning fluid is being inserted. The brush is rotated within the housing while the cleaning fluid is inserted and removed. The edge of the semiconductor substrate is inserted into a slot of the housing. The edge of the semiconductor substrate inserted into the slot is maintained at a distance and for a period of time. The distance is configured such that the brush contacts the edge of the semiconductor substrate but continues to enable rotation of the brush within the housing.

1 . A method for cleaning an edge of a semiconductor substrate, comprising:
 providing a brush in a housing, the housing providing a volume for holding the brush;   inserting a cleaning fluid into the housing to at least partially fill the volume holding the brush with the cleaning fluid;   removing the cleaning fluid from the volume of the housing while the cleaning fluid is being inserted;   rotating the brush within the housing while the cleaning fluid is inserted and removed;   inserting the edge of the semiconductor substrate into a slot of the housing; and   maintaining the edge of the semiconductor substrate inserted into the slot at a distance and for a period of time, the distance configured such that the brush contacts the edge of the semiconductor substrate but continues to enable rotation of the brush within the housing.   
     
     
         2 . The method of  claim 1 , further comprising,
 inserting an inert gas mixture into the housing in a angle that is oriented toward the slot, the angle defined to flow the inert gas mixture toward a top surface of the semiconductor substrate when inserted into the slot and toward the volume of the housing.   
     
     
         3 . The method of  claim 1 , further comprising,
 continuing to insert the inert gas mixture into the housing before the semiconductor substrate is inserted, while the semiconductor substrate is inserted and the brush is rotated and while the semiconductor substrate is being removed from the slot.   
     
     
         4 . The method of  claim 1 , wherein the rotation of the brush causes vanes of the rotating brush to contact the edge of the semiconductor substrate, the contacting causing mechanical stress on contaminants present on the edge, the providing of the cleaning fluid acting to lubricate the vanes during the rotating. 
     
     
         5 . The method of  claim 1 , wherein the cleaning fluid is selected from hydrogen fluoride in de-ionized water, ammonia in de-ionized water, hydrogen peroxide, ammonia solutions, wherein the ammonia solutions include ammonium fluoride, iminodiacetic acid, amines in de-ionized water, wherein the amines are selected from triethlamine, triethanolamine, hydroxyethlmorpholine, hydroxylamine, dimethylformamide, dimethylacetamide, methyldiethanolamine, diglycolamine, polymethyldiethylenetriamine, catechol, phenol. 
     
     
         6 . The method of  claim 1 , wherein the removing of the cleaning fluid is effectuated by application of vacuum to the volume of the housing. 
     
     
         7 . The method of  claim 1 , wherein the brush is rotated at a rate of between about 5,000 rotations per minute (rpm) and about 20,000 rpm. 
     
     
         8 . The method of  claim 1 , wherein the rotating is a rotation that is counterclockwise, the counterclockwise rotation causing a surface of the brush to first contact an underside of the semiconductor substrate. 
     
     
         9 . The method of  claim 6 , wherein the application of vacuum includes orienting a first vacuum near a top region of the housing and a second vacuum near a bottom region of the housing, such that vacuum is applied near a top side and near a bottom side of the brush. 
     
     
         10 . The method of  claim 9 , further comprising,
 applying a third vacuum at an angle near the top side of the brush.   
     
     
         11 . The method of  claim 1 , wherein the housing is held at a set position to enable the inserting of the edge of the semiconductor substrate into the slot. 
     
     
         12 . The method of  claim 1 , wherein the housing is moved toward the edge of the semiconductor substrate to enable the inserting, the semiconductor wafer being rotated by a plurality of rollers while being inserted into the slot. 
     
     
         13 . A method for cleaning an edge of a semiconductor substrate, comprising:
 providing a brush in a housing, the housing providing a volume for holding the brush;   inserting a cleaning fluid into the housing to at least partially fill the volume holding the brush with the cleaning fluid;   removing the cleaning fluid from the volume of the housing while the cleaning fluid is being inserted;   rotating the brush within the housing while the cleaning fluid is inserted and removed; and   inserting the edge of the semiconductor substrate into a slot of the housing while rotating the semiconductor substrate about a plane; and   maintaining the edge of the semiconductor substrate inserted into the slot at a distance and for a period of time, the distance configured such that the brush contacts the edge of the semiconductor substrate but continues to enable rotation of the brush within the housing.   
     
     
         14 . The method of  claim 13 , further comprising,
 inserting an inert gas mixture into the housing in an angle that is oriented toward the slot, the angle defined to flow the inert gas mixture toward a top surface of the semiconductor substrate when inserted into the slot and toward the volume of the housing, the inserting of the inert gas mixture is effectuated before the semiconductor substrate is inserted, while the semiconductor substrate is inserted and the brush is rotated and while the semiconductor substrate is being removed from the slot.   
     
     
         15 . The method of  claim 13 , wherein the rotation of the brush causes vanes of the rotating brush to contact an underside of the edge of the semiconductor substrate, the contacting causing mechanical stress on contaminants present on the underside of the edge, the providing of the cleaning fluid acting to lubricate the vanes during the rotating. 
     
     
         16 . The method of  claim 13 , wherein the removing of the cleaning fluid is effectuated by application of vacuum to the volume of the housing, wherein the application of vacuum is by orienting a first vacuum near a top region of the housing and a second vacuum near a bottom region of the housing, such that vacuum is applied near a top side and near a bottom side of the brush. 
     
     
         17 . A method to clean an edge of a substrate, comprising:
 placing the edge of the substrate within an opening defined in a housing; and   rotating a brush having a plurality of outwardly extending vanes located within the housing around an axis of rotation such that a portion of the outwardly extending vanes contact the edge of the substrate to clean the edge of the substrate.   
     
     
         18 . The method of  claim 17 , further comprising:
 applying a cleaning chemistry through a fluid distributor channel to the outwardly extending vanes of the rotating bristle brush unit.   
     
     
         19 . The method of  claim 17 , further comprises:
 removing the cleaning chemistry by application of vacuum, wherein the removing is effectuated by orienting an upper drainage channel near a top region of the housing and a lower drainage channel near a bottom region of the housing, the upper and the lower drainage channels connected to vacuum ports.   
     
     
         20 . The method of  claim 17 , further comprising:
 introducing a meniscus barrier on an outer edge located on a top surface of the substrate through a proximity head to prevent contamination of the top surface.