Semiconductor device and method for fabricating the same

Abstract

A fin-type semiconductor region ( 103 ) is formed on a substrate ( 101 ), and then a resist pattern ( 105 ) is formed on the substrate ( 101 ). An impurity is implanted into the fin-type semiconductor region ( 103 ) by a plasma doping process using the resist pattern ( 105 ) as a mask, and then at least a side of the fin-type semiconductor region ( 103 ) is covered with a protective film ( 107 ). Thereafter, the resist pattern ( 105 ) is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region ( 103 ) is activated by heat treatment.

1 - 9 . (canceled) 
     
     
         10 . A semiconductor device comprising:
 a fin-type semiconductor region formed on a substrate;   a gate electrode formed astride the fin-type semiconductor region;   an extension region formed in at least a side of a portion of the fin-type semiconductor region adjacent to the gate electrode; and   an insulative sidewall spacer formed to cover the extension region, wherein an implanted impurity protection film is formed between the extension region and the insulative sidewall spacer.   
     
     
         11 . The semiconductor device of  claim 10 , wherein a top surface of a portion of the fin-type semiconductor region adjacent to the gate electrode is at least partially in contact with the insulative sidewall spacer. 
     
     
         12 . The semiconductor device of  claim 10 , wherein the implanted impurity protection film is a porous film.