Method of manufacturing semiconductor device

Abstract

In one embodiment, a method of manufacturing a semiconductor device includes successively forming first and second films to be processed on a semiconductor substrate. The method further includes removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part, the sidewall parts including side surfaces of the second film, and the bottom part including an upper surface of the first film. The method further includes supplying oxidizing ions or nitriding ions contained in plasma, generated by a microwave, a radio-frequency wave, or electron cyclotron resonance, to the sidewall parts and the bottom part of the slit part by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the slit part.

1 - 18 . (canceled) 
     
     
         19 . The method according to  claim 21 , further comprising:
 forming, before forming the tunnel insulating film, plural isolation trenches on the surface of the semiconductor substrate;   burying a first insulating film in the isolation trenches; and   burying a second insulating film in the slit part,   wherein   each of the isolation trenches is formed along a first direction and includes sidewall parts and a bottom part, and   the slit part is formed along a second direction perpendicular to the first direction and includes the sidewall parts and the bottom part, the sidewall parts including side surfaces of the first conductive film, the charge block layer, and the charge storage layer, and the bottom part including the upper surface of the tunnel insulating film.   
     
     
         20 . (canceled) 
     
     
         21 . A method of manufacturing a semiconductor device, the method comprising:
 forming a first film to be processed, on a semiconductor substrate;   forming a second film to be processed, on the first film;   removing a predetermined region of the second film by etching, to form a slit part including sidewall parts and a bottom part, the sidewall parts including side surfaces of the second film, and the bottom part including an upper surface of the first film; and   supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the slit part by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the slit part,   wherein   the first film comprises a tunnel insulating film formed on a surface of the semiconductor substrate, and   the second film comprises a charge storage layer, a charge block layer, and a first conductive film as a control gate electrode, which are sequentially formed on an upper surface of the tunnel insulating film.