Inventor · disambiguated record
Junichi Shiozawa
Also filed as: SHIOZAWA JUNICHI
16 granted patents·5 pending applications·260 citations·filing 1987–2012
93Inventor score
Top patents by PatentIndex Score
21 records- 0190US5670805AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1996·Granted Sep 23, 1997·59 cites·1 claims
- 0288US7723772B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted May 25, 2010·11 cites·8 claims
- 0386US5389570AMethod of forming boron doped silicon layer and semiconductorTOSHIBA KK·Filed 1992·Granted Feb 14, 1995·98 cites·25 claims
- 0485US5543348AControlled recrystallization of buried strap in a semiconductor memory deviceTOSHIBA KK·Filed 1995·Granted Aug 6, 1996·47 cites·15 claims
- 0581US7927949B2Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2010·Granted Apr 19, 2011·5 cites·6 claims
- 0674US7679127B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Mar 16, 2010·6 cites·9 claims
- 0773US7858467B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2009·Granted Dec 28, 2010·4 cites·7 claims
- 0865US6803622B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2002·Granted Oct 12, 2004·8 cites·11 claims
- 0963US8097503B2Method of manufacturing semiconductor deviceKAMIOKA ISAO·Filed 2010·Granted Jan 17, 2012·1 cites·7 claims
- 1061US4887345ATurret apparatusSANKYO SEIKI SEISAKUSHO KK·Filed 1987·Granted Dec 19, 1989·21 cites·5 claims
- 1156US7928530B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeTOSHIBA KK·Filed 2009·Granted Apr 19, 2011·0 cites·18 claims
- 1254US8728903B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeYAEGASHI TOSHITAKE·Filed 2012·Granted May 20, 2014·0 cites·5 claims
- 1352US7645674B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeTOSHIBA KK·Filed 2007·Granted Jan 12, 2010·0 cites·5 claims
- 1451US8404537B2Method of manufacturing semiconductor deviceKAMIOKA ISAO·Filed 2012·Granted Mar 26, 2013·0 cites·4 claims
- 1551US8258568B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeYAEGASHI TOSHITAKE·Filed 2011·Granted Sep 4, 2012·0 cites·14 claims
- 1648US7315073B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeTOSHIBA KK·Filed 2005·Granted Jan 1, 2008·0 cites·10 claims
- 1748US2012122294A1Method of manufacturing semiconductor deviceKAMIOKA ISAO·Filed 2011·Application pending·0 cites
- 1847US2006240619A1Semiconductor memory device and method of manufacturing the sameOZAWA YOSHIO·Filed 2005·Application pending·0 cites
- 1944US2010045982A1Particle counter and particle counting device having particle counter, and particle counting system and its use methodNIDEC SANKYO CORP·Filed 2006·Application pending·0 cites
- 2038US2005029576A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2004·Application pending·0 cites
- 2138US2006243978A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →