Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes a semiconductor substrate; a first insulating film formed on the top surface of the semiconductor substrate; a first gate electrode formed on the first insulating film; a second insulating film having a three-layered structure made by sequentially depositing a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer on the first gate electrode; a second gate electrode formed on the second insulating film; a first plane including the side surface of the first gate electrode or the side surface of the second gate electrode; and a second plane including the side surface of the second kind of insulating layer, wherein distance between said first plane and said second plane does not exceed 5 nm.

1 - 11 . (Canceled)  
   
   
       12 . A method of manufacturing a semiconductor device comprising: 
 forming a first insulating film on the top surface of a semiconductor substrate;    depositing a first gate electrode material on the first insulating film;    forming a second insulating film having a three-layered structure including a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer sequentially stacked on the first gate electrode material;    depositing a second gate electrode material on the second insulating film;    etching the second gate electrode material, the second insulating film and the first gate electrode material in a uniform pattern to form a first gate electrode made of the first gate electrode material and to form a second electrode made of the second gate electrode material; and    oxidizing at least side surfaces of the fist gate electrode, side surfaces of the second gate electrode and side surfaces of the second insulating film in an ozone (O 3 ) atmosphere.    
   
   
       13 . A method of manufacturing a semiconductor device comprising: 
 forming a first insulating film on the top surface of a semiconductor substrate;    depositing a first gate electrode material on the first insulating film;    forming a second insulating film having a three-layered structure including a first kind of insulating layer, a second kind of insulating layer and a first kind of insulating layer sequentially stacked on the first gate electrode material;    depositing a second gate electrode material on the second insulating film;    etching the second gate electrode material, the second insulating film and the first gate electrode material in a uniform pattern to form a first gate electrode made of the first gate electrode material and to form a second electrode made of the second gate electrode material; and    oxidizing at least side surfaces of the first gate electrode, side surfaces of the second gate electrode and side surfaces of the second insulating film in an atmosphere containing hydrogen (H 2 ) and oxygen (O 2 ).    
   
   
       14 . The semiconductor device according to  claim 12  further comprising; 
 after the etching step, carrying out dry oxidation of at least side surfaces of the first gate electrode, side surfaces of the second gate electrode and side surfaces of the second insulating film in an oxygen (O 2 ) atmosphere; and    depositing an oxide film at least on side surfaces of the first gate electrode, side surfaces of the second gate electrode and side surfaces of the second insulating film.    
   
   
       15 . The semiconductor device according to  claim 13  further comprising; 
 after the etching step, carrying out dry oxidation of at least side surfaces of the first gate electrode, side surfaces of the second gate electrode and side surfaces of the second insulating film in an oxygen (O 2 ) atmosphere; and    depositing an oxide film at least on side surfaces of the first gate electrode, side surfaces of the second gate electrode and side surfaces of the second insulating film.