Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same

Abstract

A resist pattern thickening material is disclosed that can utilize ArF excimer laser light; which, when applied over a resist pattern such as an ArF resist having a line pattern or the like, can thicken the resist pattern regardless of the size of the resist pattern; which has excellent etching resistance; and which is suited for forming a fine space pattern or the like, exceeding the exposure limits. Also disclosed is a process for forming a resist pattern and a method for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

1 . A resist pattern thickening material, comprising:
 a resin; and   a compound represented by the following general formula (1):   
       
         
           
           
               
               
           
         
       
       where R represents a moiety having a cyclic structure, X represents a monovalent organic group containing a carboxylic group, Y represents at least any one of a hydroxyl group, an alkyl group, an alkoxy group, an amino group, an amino group substituted with an alkyl group, a carbonyl group and an alkoxycarbonyl group, m represents an integer of 1 or greater, and n represent an integer of 0 or greater. 
     
     
         2 . The resist pattern thickening material according to  claim 1 , wherein R in the general formula (1) represents a moiety having a cyclic structure containing at least one selected from the group consisting of aromatic hydrocarbons, heterocyclic compounds and alicyclic compounds. 
     
     
         3 . The resist pattern thickening material according to  claim 1 , wherein R in the general formula (1) represents a moiety having a cyclic structure containing at least one selected from the group consisting of aromatic rings, cyclohexyl rings, norbornyl and adamantane. 
     
     
         4 . The resist pattern thickening material according to  claim 1 , wherein m in the general formula (1) represents 1. 
     
     
         5 . The resist pattern thickening material according to  claim 1 , wherein the compound represented by the general formula (1) contains at least one of a hydroxyl group and an amino group. 
     
     
         6 . The resist pattern thickening material according to  claim 1 , wherein the resin is water soluble or alkali soluble. 
     
     
         7 . The resist pattern thickening material according to  claim 1 , wherein the resin is at least one selected from the group consisting of polyvinyl alcohol, polyvinyl acetal, polyvinyl acetate, polyvinylpyrrolidone, cellulose and tannin. 
     
     
         8 . The resist pattern thickening material according to  claim 1 , wherein the content of the compound represented by the general formula (1) in the resist pattern thickening material is 0.01 part to 50 parts by mass of the total mass of the resist pattern thickening material. 
     
     
         9 . The resist pattern thickening material according to  claim 1 , further comprising a surfactant. 
     
     
         10 . The resist pattern thickening material according to  claim 9 , wherein the surfactant is at least one selected from the group consisting of nonionic surfactants, cationic surfactants, anionic surfactants and amphoteric surfactants. 
     
     
         11 . The resist pattern thickening material according to  claim 9 , wherein the surfactant is selected from the group consisting of polyoxyethylene-polyoxypropylene condensation products, polyoxyalkylene alkyl ethers, polyoxyethylene alkyl ethers, polyoxyethylene derivatives, sorbitan fatty acid esters, glycerine fatty acid esters, primary alcohol ethoxylates, phenol ethoxylates, alkoxylate surfactants, fatty acid ester surfactants, amide surfactants, alcohol surfactants and ethylenediamine surfactants, alkyl cationic surfactants, amide quaternary cationic surfactants, ester quaternary cationic surfactants, amineoxide surfactants and betaine surfactants. 
     
     
         12 . The resist pattern thickening material according to  claim 9 , wherein the content of the surfactant in the resist pattern thickening material is 2 parts by mass or less per 100 parts by mass of the resist pattern thickening material. 
     
     
         13 . The resist pattern thickening material according to  claim 1 , further comprising an organic solvent. 
     
     
         14 . The resist pattern thickening material according to  claim 13 , wherein the organic solvent is at least one selected from the group consisting of alcohol solvents, linear ester solvents, cyclic ester solvents, ketone solvents, linear ether solvents and cyclic ether solvents. 
     
     
         15 . A method for manufacturing a semiconductor device, comprising:
 forming a resist pattern on a surface of a workpiece;   applying a resist pattern thickening material over the resist pattern so as to cover a surface of the resist pattern to thereby thicken the resist pattern; and   etching the surface of the workpiece using the thickened resist pattern as a mask so as to pattern the surface of the workpiece,   wherein the resist pattern thickening material comprises:   a resin; and   a compound represented by the following general formula (1):   
       
         
           
           
               
               
           
         
       
       where R represents a moiety having a cyclic structure, X represents a monovalent organic group containing a carboxylic group, Y represents at least any one of a hydroxyl group, an alkyl group, an alkoxy group, an amino group, an amino group substituted with an alkyl group, a carbonyl group and an alkoxycarbonyl group, m represents an integer of 1 or greater, and n represent an integer of 0 or greater. 
     
     
         16 . The method for manufacturing a semiconductor device according to  claim 15 , further comprising:
 applying a nonionic surfactant on the surface of the resist pattern before application of the resist pattern thickening material,   wherein the nonionic surfactant is at least one selected from the group consisting of polyoxyethylene-polyoxypropylene condensation products, polyoxyalkylene alkyl ethers, polyoxyethylene alkyl ethers, polyoxyethylene derivatives, sorbitan fatty acid esters, glycerine fatty acid esters, primary alcohol ethoxylates and phenol ethoxylates.   
     
     
         17 . The method for manufacturing a semiconductor device according to  claim 15 , wherein a space pattern formed using the thickened resist pattern is at least one selected from the group consisting of a line-and-space space pattern, a hole pattern, and a trench pattern. 
     
     
         18 . A semiconductor device manufactured by a method for manufacturing a semiconductor device, wherein the method for manufacturing a semiconductor device comprises:
 forming a resist pattern on a surface of a workpiece;   applying a resist pattern thickening material over the resist pattern so as to cover a surface of the resist pattern to thereby thicken the resist pattern; and   etching the surface of the workpiece using the thickened resist pattern as a mask so as to pattern the surface of the workpiece,   wherein the resist pattern thickening material comprises:   a resin; and   a compound represented by the following general formula (1):   
       
         
           
           
               
               
           
         
       
       where R represents a moiety having a cyclic structure, X represents a monovalent organic group containing a carboxylic group, Y represents at least any one of a hydroxyl group, an alkyl group, an alkoxy group, an amino group, an amino group substituted with an alkyl group, a carbonyl group and an alkoxycarbonyl group, m represents an integer of 1 or greater, and n represent an integer of 0 or greater.