Fuse Device

Abstract

Implementations are presented herein that relate to a fuse device, an integrated circuit including a fuse device, a method of implementing a fuse device and a method of programming a fuse device.

1 . A method of implementing a fuse device, comprising:
 forming a fuse material layer over a substrate;   patterning the fuse material layer to define a fuse region;   forming an insulating layer over the fuse material layer;   patterning the insulating layer to define a plurality of contact holes at a first end of the fuse region; and   filling a first contact hole of the plurality of contact holes with electrically conducting material to define a first contact member, the first contact member being restricted to being usable during a programming operation.   
     
     
         2 . The method according to  claim 1 , wherein the forming of the fuse material layer comprises forming a polysilicon layer and forming a silicide layer over the polysilicon layer. 
     
     
         3 . The method according to  claim 1 , further comprising patterning a wiring layer over the first contact member to form a connector to electrically couple with the first contact member, the connector being restricted to being usable during the programming operation. 
     
     
         4 . The method according to  claim 1 , further comprising filling a second contact hole of the plurality of contact holes with electrically conducting material to define a second contact member, patterning a wiring layer over the second contact member to form a second connector to electrically couple with the second contact member, the second connector being restricted to being usable during a reading operation. 
     
     
         5 . The method according to  claim 1 , wherein the forming of the fuse material layer comprises forming a layer of metal or metal compound. 
     
     
         6 . A method of programming a fuse device, comprising:
 providing a plurality of contact members disposed on a fuse material layer, a first contact member of the plurality of contact members being restricted to being usable during a programming operation; and   applying a programming current through the first contact member to deplete an area of the fuse material layer below a second contact member of the plurality of contact members.   
     
     
         7 . The method according to  claim 6 , wherein the programming current being of sufficient magnitude to initiate electromigration in a fuse link of the fuse device. 
     
     
         8 . The method according to  claim 6 , wherein an area of the fuse material layer below the first contact member is not depleted. 
     
     
         9 . The method according to  claim 6 , wherein the second contact member being restricted to being usable during a reading operation. 
     
     
         10 . The method according to  claim 6 , further comprising applying the programming current through the second contact member. 
     
     
         11 . The method according to  claim 6 , wherein the first contact member and the second contact member being spaced apart from one another. 
     
     
         12 . The method according to  claim 6 , wherein the programming current being higher than a reading current, the reading current being applied through the second contact member during a reading operation. 
     
     
         13 . The method according to  claim 6 , wherein the programming current being applied via a first switch device, the first switch device being in a conductive state.