Focus ring and substrate processing apparatus having same
Abstract
There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25 a and an outer focus ring 25 b. Here, the inner focus ring 25 a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25 b is placed so as to surround the inner focus ring 25 a and configured not to be cooled. Further, a block member 25 c is provided in a gap between the inner focus ring 25 a and the outer focus ring 25 b.
Claims
exact text as granted — not AI-modified1 . A focus ring disposed to surround a peripheral portion of a substrate in a processing chamber of a substrate processing apparatus, the focus ring comprising:
an inner focus ring placed adjacent to the substrate and configured to be cooled; an outer focus ring placed so as to surround the inner focus ring and configured not to be cooled; and a quartz member placed in a gap between the inner focus ring and the outer focus ring.
2 . The focus ring of claim 1 , wherein the quartz member is exposed to a processing space in which plasma is generated within the processing chamber.
3 . The focus ring of claim 1 , wherein a mounting table for mounting thereon the substrate and the inner focus ring is provided within the processing chamber, and
the quartz member is extended to be placed between the inner focus ring and the mounting table.
4 . A substrate processing apparatus comprising:
a processing chamber for accommodating a substrate therein; and a focus ring disposed to surround a peripheral portion of a substrate in the processing chamber, wherein the focus ring comprises: an inner focus ring placed adjacent to the substrate and configured to be cooled; an outer focus ring placed so as to surround the inner focus ring and configured not to be cooled; and a quartz member placed in a gap between the inner focus ring and the outer focus ring.
5 . A substrate processing apparatus comprising:
a processing chamber for accommodating a substrate therein; a focus ring configured to surround a peripheral portion of the substrate disposed in the processing chamber; and a mounting table for mounting thereon the substrate and the focus ring, wherein the focus ring comprises: an inner focus ring placed adjacent to the substrate and configured to be cooled; and an outer focus ring placed so as to surround the inner focus ring and configured not to be cooled, the mounting table is configured to be cooled such that a temperature of the mounting table becomes lower than that of the inner focus ring, and a quartz member is placed in a gap between the inner focus ring and the mounting table.
6 . The substrate processing apparatus of claim 5 , wherein the quartz member is placed between the inner focus ring and a mounting surface of the mounting table on which the inner focus ring is mounted.
7 . The substrate processing apparatus of claim 6 , wherein the quartz member is extended to be placed in a gap between the inner focus ring and the outer focus ring.
8 . The substrate processing apparatus of claim 6 , wherein a quartz member is further provided in a gap between the inner focus ring and the outer focus ring.
9 . A substrate processing apparatus comprising:
a processing chamber for accommodating a substrate therein; a focus ring disposed to surround a peripheral portion of the substrate in the processing chamber; a mounting table for mounting thereon the substrate and the focus ring; and a gas supply unit configured to supply a gas into a gap between the focus ring and the mounting table, wherein the focus ring comprises an inner focus ring placed adjacent to the substrate and configured to be cooled; and an outer focus ring placed so as to surround the inner focus ring and configured not to be cooled, and the gas supply unit is configured to supply the gas into at least one of a gap between the inner focus ring and the outer focus ring and a gap between the inner focus ring and the mounting table.
10 . The substrate processing apparatus of claim 9 , wherein the gas supplied by the gas supply unit includes an oxygen gas.
11 . The substrate processing apparatus of claim 9 , wherein the gas supplied by the gas supply unit is an inert gas.
12 . The substrate processing apparatus of claim 9 , wherein the gas supplied by the gas supply unit is a processing gas.
13 . A focus ring disposed to surround a peripheral portion of a substrate in a processing chamber of a substrate processing apparatus, the focus ring comprising:
an inner focus ring placed adjacent to the substrate and configured to be cooled; and an outer focus ring placed so as to surround the inner focus ring and configured not to be cooled, wherein the inner focus ring has a thin-plate shape flange exposed to a processing space within the processing chamber and protruded so as to cover a part of the outer focus ring.
14 . The focus ring of claim 13 , wherein the flange of the inner focus ring has a thickness ranging from about 1.7 mm to about 2.0 mm.
15 . A substrate processing apparatus comprising:
a processing chamber for accommodating a substrate therein; and a focus ring disposed to surround a peripheral portion of the substrate in the processing chamber, wherein the focus ring comprises: an inner focus ring placed adjacent to the substrate and configured to be cooled; and an outer focus ring placed so as to surround the inner focus ring and configured not to be cooled, and the inner focus ring has a thin-plate shape flange exposed to a processing space within the processing chamber and protruded so as to cover a part of the outer focus ring.Cited by (0)
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