Semiconductor device manufacturing method

Abstract

Provided are a semiconductor device producing method with simple production steps while preventing contamination of a bonding pad and preventing warp generation in an adherend such as a substrate, a lead frame, or a semiconductor element, thereby improving yield; an adhesive sheet used in this method; and a semiconductor device obtained by this method. The invention includes a pre-setting step of pre-setting a semiconductor element 13 to an adherend 11 through an adhesive sheet 12, and a wire bonding step of wire bonding the element 13 in the bonding temperatures range of 80 to 250° C. without performing any heating step, wherein, as the adhesive sheet 12, a sheet having a storage elastic modulus of 1 MPa or more in the temperature range of 80 to 250° C. or a storage elastic modulus of 11 MPa or more at any temperature in the temperature range before curing the sheet 12 is used.

1 .- 9 . (canceled) 
     
     
         10 . An adhesive sheet which is used in the production of a semiconductor device, and, while in an uncured state, has a storage elastic modulus of 1 MPa or more at any temperature in the temperature range of 80 to 250° C., further comprising a thermoplastic resin, wherein the thermoplastic resin is an acrylic resin, and wherein a crosslinking agent is added to said adhesive sheet. 
     
     
         11 . The adhesive sheet according to  claim 10 , comprising both of a thermosetting resin and a thermoplastic resin. 
     
     
         12 . (canceled) 
     
     
         13 . The adhesive sheet according to  claim 11 , wherein the thermosetting resin is an epoxy resin and/or a phenol resin. 
     
     
         14 .- 15 . (canceled) 
     
     
         16 . The adhesive sheet according to  claim 10 , wherein the adhesive sheet comprises a core member and an adhesive layer, and wherein the adhesive layer contains the thermoplastic resin.