Method and structure for reworking antireflective coating over semiconductor substrate

Abstract

A method and a structure for reworking an antireflective coating (ARC) layer over a semiconductor substrate. The method includes providing a substrate having a material layer, forming a planarization layer on the material layer, forming an organic solvent soluble layer on the planarization layer, forming an ARC layer on the organic solvent soluble layer, forming a pattern in the ARC layer, and removing the organic solvent soluble layer and the ARC layer with an organic solvent while leaving the planarization layer unremoved. The structure includes a substrate having a material layer, a planarization layer on the material layer, an organic solvent soluble layer on the planarization layer, and an ARC layer on the organic solvent soluble layer.

1 . A multilayer structure comprising:
 a substrate having a material layer;   a planarization layer on the material layer;   an organic solvent soluble layer on the planarization layer; and   an ARC layer on the organic solvent soluble layer.   
     
     
         2 . The multilayer structure of  claim 1 , wherein the material layer is an organic dielectric, a metal, a ceramic, or a semiconductor. 
     
     
         3 . The multilayer structure of  claim 1 , further comprising:
 a hardmask layer between the material layer and the planarization layer.   
     
     
         4 . The multilayer structure of  claim 1 , further comprising:
 a hardmask layer between the planarization layer and the organic solvent soluble layer.   
     
     
         5 . The multilayer structure of  claim 1 , wherein the ARC layer is a silicon ARC layer. 
     
     
         6 . The multilayer structure of  claim 1 , the organic solvent soluble layer comprises polysulfone, polyarylsulfone, polyethersulfone, polyimide, or polyarylether. 
     
     
         7 . The multilayer structure of  claim 6 , wherein the thickness of the organic solvent soluble layer is in the range from about 20 nm to about 100 nm. 
     
     
         8 . A multilayer structure comprising:
 a semiconductor substrate having a material layer and a hardmask layer on the material layer;   an organic solvent soluble layer on the hardmask layer;   a planarization layer on the organic solvent soluble layer; and   an ARC layer on the planarization layer.   
     
     
         9 . The multilayer structure of  claim 8 , wherein the material layer is an organic dielectric, a metal, a ceramic, or a semiconductor. 
     
     
         10 . The multilayer structure of  claim 8 , wherein the ARC layer is a silicon ARC layer. 
     
     
         11 . The multilayer structure of  claim 8 , the organic solvent soluble layer comprises polysulfone, polyarylsulfone, polyethersulfone, polyimide, or polyarylether. 
     
     
         12 . The multilayer structure of  claim 11 , wherein the thickness of the organic solvent soluble layer is in the range from about 20 nm to about 100 nm.