Plasma processing apparatus

Abstract

Disclosed is a capacitively-coupled plasma etching apparatus, in which a focus ring is provided surrounding a substrate placing area of a placing table for adjusting a state of plasma. A ring type insulating member is installed along the focus ring between the top surface of the placing table and the bottom surface of the focus ring, and a heat transfer member is installed between the top surface of the placing table and the bottom surface of the focus ring to be closely attached to the top surface and the bottom surface at a position adjacent to the insulating member in a diameter direction of a wafer. During the plasma processing, the heat in the focus ring is transferred to the placing table through the heat transfer member to be cooled down and the amount of sediment attached to the rear surface of the wafer can be reduced.

1 . A plasma processing apparatus that processes a substrate to be processed using plasma, the apparatus comprising:
 a vacuum chamber including a lower electrode and an upper electrode configured to generate the plasma by introducing a processing gas and applying a high-frequency power between the lower electrode and an upper electrode, thereby processing the substrate using the plasma;   a placing table provided in the vacuum chamber serving as the lower electrode and configured to receive a substrate on a substrate placing area;   a ring member installed on the placing table surrounding the substrate placing area and configured to adjust a state of the plasma generated between the lower electrode and the upper electrode;   an insulating member installed along the ring member between a top surface of the placing table and a bottom surface of the ring member in a concentric pattern with a center of the substrate on the placing table and configured to adjust a potential difference between the ring member and the substrate thereby injecting ions of the plasma into a rear surface of the substrate; and   a heat transfer member closely attached to each of the top surface of the placing table and the bottom surface of the ring member along the ring member between the top surface of the placing table and the bottom surface of the ring member at a position adjacent to the insulating member in a diameter direction of the substrate.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the top surface of the insulating member contacts the ring member. 
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein the insulating member is installed at both sides of the inside and the outside of the diameter direction of the substrate with respect to the heat transfer member. 
     
     
         4 . A plasma processing apparatus that processes a substrate to be processed using plasma, the apparatus comprising:
 a vacuum chamber including a lower electrode and an upper electrode configured to generate the plasma by introducing a processing gas and applying a high-frequency power between the electrodes, thereby processing the substrate using the plasma;   a placing table provided in the vacuum chamber serving as the lower electrode and configured to receive a substrate on a substrate placing area;   a ring member installed on the placing table surrounding the substrate placing area and configured to adjust a state of plasma generated between the lower electrode and the upper electrode;   an insulating member installed along the ring member between a top surface of the placing table and a bottom surface of the ring member in a concentric pattern with a center of the substrate on the placing table and configured to adjust a potential difference between the ring member and the substrate thereby injecting ions of the plasma into a rear surface of the substrate;   a plurality of lower heat transfer members closely attached to each of the insulating member and the placing table between a top surface of the insulating member and a top surface of the placing table in a concentric pattern with a center of the substrate on the placing table along the ring member and spaced apart from one another in a diameter direction of the ring member; and   a plurality of upper heat transfer members closely attached to each of the insulating member and the ring member between a bottom surface of the insulating member and a bottom surface of the ring member in the concentric pattern with the center of the substrate on the placing table along the ring member and spaced apart from one another in the diameter direction of the ring member.   
     
     
         5 . The plasma processing apparatus of  claim 4 , wherein at least one side of the upper heat transfer member and the lower heat transfer member is notched so that a space between the heat transfer members adjacent to each other in the diameter direction of the ring member is allowed to communicate with atmosphere in the vacuum chamber. 
     
     
         6 . A plasma processing apparatus that processes a substrate to be processed using plasma, the apparatus comprising:
 a vacuum chamber including a lower electrode and an upper electrode configured to generate the plasma by introducing a processing gas and applying a high-frequency power between the lower electrode and an upper electrode, thereby processing the substrate using the plasma;   a placing table provided in the vacuum chamber serving as the lower electrode and configured to receive a substrate on a substrate placing area;   a ring member installed on the placing table surrounding the substrate placing area and configured to adjust a state of plasma generated between the lower electrode and the upper electrode;   an insulating member installed along the ring member between a top surface of the placing table and a bottom surface of the ring member in a concentric pattern with a center of the substrate on the placing table and configured to adjust a potential difference between the ring member and the substrate thereby injecting ions of the plasma into a rear surface of the substrate; and   a heat transfer member closely attached to each of the sides of the ring member, the insulating member, and the placing table between those sides along the ring member.