Wiring board manufacturing method, semiconductor device manufacturing method and wiring board

Abstract

A semiconductor device 100 has such a structure that a semiconductor chip 110 is flip-chip mounted on a wiring board 120. The wiring board 120 has a multilayer structure in which a plurality of wiring layers and a plurality of insulating layers are arranged, and a first electrode pad 130 is formed on a chip mounting side. A taper surface 132 of the first electrode pad 130 has a gradient in an orientation reduced in an upward direction toward a solder connecting side or a chip mounting side. Therefore, a holding force for a force applied to the solder connecting side or the chip mounting side is increased, and furthermore, the taper surface 132 adheres to a tapered internal wall of an insulating layer of a first layer so that a bonding strength to the insulating layer is increased.

1 . A wiring board, comprising:
 a first insulating layer having a first through hole formed therethrough and comprising a first surface and a second surface opposite to the first surface, wherein the first through hole is formed such that a diameter of the first through hole is gradually increased from the first surface toward the second surface;   a first electrode pad formed in the first through hole and comprising: a first face exposed from the first surface of the first insulating layer; and a second face opposite to the first face, wherein the first electrode pad is formed such that a diameter of the first electrode pad is gradually increased from the first face toward the second face and a diameter of the second face is larger than that of the first face;   a second electrode pad formed on the first electrode pad and the first insulating layer, wherein a diameter of the second electrode pad is larger than that of the first electrode pad;   a second insulating layer formed on the first insulating layer such that the second electrode pad is covered by the second insulating layer, the second insulating layer having a second through hole which exposes a portion of the second electrode pad; and   a conductive member formed in the second through hole so as to be electrically connected to the second electrode pad.   
     
     
         2 . The wiring board according to  claim 1 , wherein the first insulating layer is formed on a support substrate and the first electrode pad is exposed to outside when the support substrate is removed from the wiring board. 
     
     
         3 . The wiring board according to  claim 1 , wherein an angle formed between a side surface of the first electrode pad and the first surface of the first insulating layer is in a range of 50 to 80 degrees. 
     
     
         4 . The wiring board according to  claim 1 , wherein an inner surface of the first insulating layer that contacts the first electrode pad is a roughed surface. 
     
     
         5 . The wiring board according to  claim 1 , wherein the diameter of the second electrode pad is larger than that of the second face of the first electrode pad by 50% to 80%. 
     
     
         6 . The wiring board according to  claim 1 , wherein the second through hole exposes a center portion of the second electrode pad when viewed from a top. 
     
     
         7 . The wiring board according to  claim 1 , wherein the first face of the first electrode pad is recessed relative to the first surface of the first insulating layer. 
     
     
         8 . A semiconductor device, comprising:
 a wiring board comprising:
 a first insulating layer having a first through hole formed therethrough and comprising a first surface and a second surface opposite to the first surface, wherein the first through hole is formed such that a diameter of the first through hole is gradually increased from the first surface toward the second surface; 
 a first electrode pad formed in the first through hole and comprising: a first face exposed from the first surface of the first insulating layer; and a second face opposite to the first face, wherein the first electrode pad is formed such that a diameter of the first electrode pad is gradually increased from the first face toward the second face and a diameter of the second face is larger than that of the first face; 
 a second electrode pad formed on the first electrode pad and the first insulating layer, wherein a diameter of the second electrode pad is larger than that of the first electrode pad; 
 a second insulating layer formed on the first insulating layer such that the second electrode pad is covered by the second insulating layer, the second insulating layer having a second through hole which exposes a portion of the second electrode pad; and 
 a conductive member formed in the second through hole so as to be electrically connected to the second electrode pad; 
   a semiconductor chip provided on one surface of the wiring board; and   an external connection terminal provided on an other surface of the wiring board.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein the first face of the first electrode pad is recessed relative to the first surface of the first insulating layer. 
     
     
         10 . The semiconductor device according to  claim 8 , wherein
 the one surface of the wiring board corresponds to the first face of the first electrode pad, and   the semiconductor chip is provided on the first face of the first electrode pad.   
     
     
         11 . The semiconductor device according to  claim 8 , wherein
 the other surface of the wiring board corresponds to the first face of the first electrode pad, and   the external connection terminal is provided on the first face of the first electrode pad.