Uniformly aligned well and isolation regions in a substrate and resulting structure

Abstract

A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process expands the implanted regions such their boundaries align within a predetermined distance from the edge of a trench. The distances are proportionate for each trench and each adjacent isolation region.

1 . A structure comprising:
 a substrate having a depression and at least a first region;   the depression having at least one first edge;   the first region having a boundary; and   the first region being coupled to at least a first portion of the depression such that a portion of the boundary of the first region is at a predetermined distance (W 1 ) from the first edge.   
     
     
         2 . The structure of  claim 1 , further comprising a second region, the second region having a second boundary coupled to at least a second portion of the depression such that the second boundary is at a second predetermined distance (W 2 ) from a second edge of the depression. 
     
     
         3 . The structure of  claim 2 , wherein the predetermined distance from the first edge and the second predetermined distance, are substantially similar. 
     
     
         4 . The structure of  claim 2 , wherein the predetermined distance from the first edge and the second predetermined distance, are within 10 nm. 
     
     
         5 . The structure of  claim 2 , wherein the first region and the second region are doped with a first charge and a second charge respectively. 
     
     
         6 . A structure comprising:
 an isolation region having one or more side edges, and a bottom edge; and   a first diffusion region coupled to at least a portion of the isolation region having a predetermined distance (W 1 ) from one of the side edges of the isolation region.   
     
     
         7 . The structure of  claim 6 , further comprising a second diffusion region ( 810   b ) having substantially the same predetermined distance (W 2 ) from a second one of the side edges. 
     
     
         8 . The structure of  claim 7 , wherein:
 the first diffusion region is coupled to the second diffusion region at the bottom edge of the isolation region; and   the portion of the first diffusion region along the bottom edge of the isolation region and the portion of the second diffusion region along the bottom edge of the isolation region are substantially similar.