Inventor · disambiguated record
Robert J. Gauthier, Jr.
Also filed as: CHATTY KIRAN V · FURUKAWA TOSHIHARU · GAUTHIER JR ROBERT · GAUTHIER JR ROBERT J
262 granted patents·25 pending applications·3,355 citations·filing 1997–2024
99Inventor score
Files withIBM194GLOBALFOUNDRIES INC19ABOU-KHALIL MICHEL J13GLOBALFOUNDRIES US INC11GAUTHIER JR ROBERT J9
Top patents by PatentIndex Score
287 records- 0199US7790524B2Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structuresIBM·Filed 2008·Granted Sep 7, 2010·248 cites·16 claims
- 0299US7786535B2Design structures for high-voltage integrated circuitsIBM·Filed 2008·Granted Aug 31, 2010·249 cites·14 claims
- 0398US9818542B2Gate-all-around fin deviceIBM·Filed 2015·Granted Nov 14, 2017·19 cites·12 claims
- 0498US9590108B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 7, 2017·20 cites·12 claims
- 0598US9431388B1Series-connected nanowire structuresIBM·Filed 2015·Granted Aug 30, 2016·36 cites·5 claims
- 0698US9397163B2Gate-all-around fin deviceIBM·Filed 2015·Granted Jul 19, 2016·19 cites·9 claims
- 0798US9281379B1Gate-all-around fin deviceIBM·Filed 2014·Granted Mar 8, 2016·31 cites·19 claims
- 0897US9923096B2Gate-all-around fin deviceIBM·Filed 2017·Granted Mar 20, 2018·12 cites·12 claims
- 0997US7790543B2Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structuresIBM·Filed 2008·Granted Sep 7, 2010·80 cites·9 claims
- 1097US7301210B2Method and structure to process thick and thin fins and variable fin to fin spacingIBM·Filed 2006·Granted Nov 27, 2007·65 cites·8 claims
- 1197US7163851B2Concurrent Fin-FET and thick-body device fabricationIBM·Filed 2002·Granted Jan 16, 2007·111 cites·22 claims
- 1296US9911852B2Gate-all-around fin deviceIBM·Filed 2016·Granted Mar 6, 2018·8 cites·14 claims
- 1396US7276768B2Semiconductor structures for latch-up suppression and methods of forming such semiconductor structuresIBM·Filed 2006·Granted Oct 2, 2007·30 cites·8 claims
- 1496US6876035B2High voltage N-LDMOS transistors having shallow trench isolation regionIBM·Filed 2003·Granted Apr 5, 2005·86 cites·12 claims
- 1596US6232163B1Method of forming a semiconductor diode with depleted polysilicon gate structureIBM·Filed 1999·Granted May 15, 2001·136 cites·10 claims
- 1695US10381483B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·5 cites·12 claims
- 1795US10147822B2Gate-all-around fin deviceIBM·Filed 2017·Granted Dec 4, 2018·5 cites·10 claims
- 1895US10090400B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·6 cites·8 claims
- 1995US10008491B1Low capacitance electrostatic discharge (ESD) devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 26, 2018·14 cites·20 claims
- 2095US9978874B2Gate-all-around fin deviceIBM·Filed 2017·Granted May 22, 2018·6 cites·20 claims
- 2195US6288426B1Thermal conductivity enhanced semiconductor structures and fabrication processesIBM·Filed 2000·Granted Sep 11, 2001·87 cites·32 claims
- 2294US10573754B2Gate-all around fin deviceIBM·Filed 2017·Granted Feb 25, 2020·4 cites·11 claims
- 2394US10090301B2Gate-all-around fin deviceIBM·Filed 2017·Granted Oct 2, 2018·4 cites·8 claims
- 2494US9041127B2FinFET device technology with LDMOS structures for high voltage operationsIBM·Filed 2013·Granted May 26, 2015·19 cites·16 claims
- 2594US8445355B2Metal-insulator-metal capacitors with high capacitance densityABOU-KHALIL MICHEL J·Filed 2010·Granted May 21, 2013·18 cites·22 claims
- 2694US6646305B2Grounded body SOI SRAM cellIBM·Filed 2001·Granted Nov 11, 2003·72 cites·11 claims
- 2794US6015993ASemiconductor diode with depleted polysilicon gate structure and methodIBM·Filed 1998·Granted Jan 18, 2000·106 cites·15 claims
- 2893US10658514B2Gate-all-around fin deviceIBM·Filed 2018·Granted May 19, 2020·2 cites·20 claims
- 2993US8373956B2Low leakage electrostatic discharge protection circuitIBM·Filed 2010·Granted Feb 12, 2013·14 cites·22 claims
- 3092US10381484B2Gate-all-around fin deviceIBM·Filed 2017·Granted Aug 13, 2019·3 cites·12 claims
- 3192US8841174B1Silicon controlled rectifier with integral deep trench capacitorIBM·Filed 2013·Granted Sep 23, 2014·12 cites·8 claims
- 3292US7782580B2Stacked power clamp having a BigFET gate pull-up circuitIBM·Filed 2007·Granted Aug 24, 2010·25 cites·2 claims
- 3392US6624031B2Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structureIBM·Filed 2001·Granted Sep 23, 2003·62 cites·13 claims
- 3492US6294419B1Structure and method for improved latch-up using dual depth STI with impurity implantIBM·Filed 2000·Granted Sep 25, 2001·61 cites·17 claims
- 3591US11804481B2Fin-based and bipolar electrostatic discharge devicesGLOBALFOUNDRIES US INC·Filed 2021·Granted Oct 31, 2023·2 cites·19 claims
- 3691US6034388ADepleted polysilicon circuit element and method for producing the sameIBM·Filed 1998·Granted Mar 7, 2000·87 cites·15 claims
- 3790US10096587B1Fin-based diode structures with a realigned feature layoutGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 3890US8637388B2Semiconductor device heat dissipation structureIBM·Filed 2013·Granted Jan 28, 2014·12 cites·20 claims
- 3990US8169760B2Signal and power supply integrated ESD protection deviceCHANG SHUNHUA T·Filed 2009·Granted May 1, 2012·22 cites·27 claims
- 4090US7297582B2Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensionsIBM·Filed 2004·Granted Nov 20, 2007·36 cites·14 claims
- 4190US5770504AMethod for increasing latch-up immunity in CMOS devicesIBM·Filed 1997·Granted Jun 23, 1998·84 cites·8 claims
- 4289US12027587B2Electrostatic discharge (ESD) device with improved turn-on voltageGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Granted Jul 2, 2024·1 cites·20 claims
- 4389US8760831B2Bi-directional back-to-back stacked SCR for high-voltage pin ESD protection, methods of manufacture and design structuresIBM·Filed 2013·Granted Jun 24, 2014·6 cites·20 claims
- 4489US8039868B2Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structureIBM·Filed 2008·Granted Oct 18, 2011·12 cites·18 claims
- 4589US7714356B2Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltageIBM·Filed 2007·Granted May 11, 2010·17 cites·20 claims
- 4689US6144086AStructure for improved latch-up using dual depth STI with impurity implantIBM·Filed 1999·Granted Nov 7, 2000·84 cites·26 claims
- 4788US10290626B1High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted May 14, 2019·5 cites·18 claims
- 4888US9391065B1Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diodeIBM·Filed 2015·Granted Jul 12, 2016·5 cites·7 claims
- 4988US8692291B2Passive devices for FinFET integrated circuit technologiesCLARK JR WILLIAM F·Filed 2012·Granted Apr 8, 2014·10 cites·23 claims
- 5088US8216909B2Field effect transistor with air gap dielectricABADEER WAGDI W·Filed 2009·Granted Jul 10, 2012·14 cites·5 claims
Showing the top 50 of 287 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Robert J. Gauthier, Jr. files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →