US2012282749A1PendingUtilityA1
High performance resonant element
Est. expiryJun 12, 2026(expired)· nominal 20-yr term from priority
H04B 3/14
45
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A method of forming a semiconductor device for processing a signal includes providing a circuit board including an input signal line, providing a high performance resonant element connected to the input signal line, and providing an output signal line connected to the high performance resonant element. The high performance resonant element includes a via.
Claims
exact text as granted — not AI-modified1 . A method of forming a semiconductor device for processing a signal, said method comprising:
providing a circuit board including an input signal line; providing a high performance resonant element connected to said input signal line; and providing an output signal line connected to said high performance resonant element, wherein said high performance resonant element comprises a via.
2 . The method of claim 1 , further comprising reducing a length of said via.
3 . The method of claim 2 , wherein said reducing comprises one of backdrilling and milling of said via.
4 . The method of claim 2 , wherein said reducing comprises adjusting a thickness of said circuit board.
5 . The method of claim 1 , wherein said signal comprises a plurality of frequency components.
6 . The method of claim 5 , wherein said via processes said plurality of frequency component to provide a desired output signal.
7 . The method of claim 6 , wherein said via attenuates at least one of said plurality of frequency components.
8 . The method of claim 7 , wherein said at least one of said plurality of frequencies comprises a noise frequency.
9 . The method of claim 7 , wherein said via permits at least one other of said plurality of frequency components to pass.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.