US2012295400A1PendingUtilityA1

Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device

45
Assignee: HATAKEYAMA KEIICHIPriority: Oct 9, 2007Filed: May 18, 2012Published: Nov 22, 2012
Est. expiryOct 9, 2027(~1.2 yrs left)· nominal 20-yr term from priority
H10W 74/00H10W 72/884H10W 90/754H10W 72/075H10W 72/07331H10W 72/07339H10W 72/07338H10W 72/073H10W 72/354H10W 72/321H10W 72/01331H10W 90/734H10W 74/114H10P 72/7416H10P 72/7414H10P 72/742H10P 72/7402H10P 72/74H10P 54/00H10W 72/071H10P 52/00H10P 72/0442
45
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

The method for producing a semiconductor chip with an adhesive film includes preparing a laminate of a divided semiconductor wafer, an adhesive film and a dicing tape, the adhesive film having a thickness in the range of 1 to 15 μm and a tensile elongation at break of less than 5%, and the tensile elongation at break being less than 110% of the elongation at a maximum load; and dividing the adhesive film for a semiconductor by picking up the plurality of semiconductor chips in a laminating direction of the laminate. The divided semiconductor wafer has been obtained by cutting the semiconductor wafer in a thickness less than that of the semiconductor wafer and by grinding the other side of the semiconductor wafer on which no cut is formed to reach the cut.

Claims

exact text as granted — not AI-modified
1 . A method for producing a semiconductor device, comprising a step of bonding a semiconductor chip with an adhesive film to another semiconductor chip or to a semiconductor chip mounting support member,
 wherein said semiconductor chip with an adhesive film has been obtained by a method comprising:   preparing a laminate in which at least a divided semiconductor wafer comprising a plurality of semiconductor chips, obtained by forming a cut which separates the semiconductor wafer into a plurality of semiconductor chips on one side of the semiconductor wafer in a thickness less than that of the semiconductor wafer and by grinding the other side of the semiconductor wafer on which no cut is formed to reach the cut, an adhesive film for a semiconductor and a dicing tape are laminated, the adhesive film for a semiconductor having a thickness in the range of 1 to 15 μm and a tensile elongation at break of less than 5%, and the tensile elongation at break being less than 110% of the elongation at a maximum load; and   dividing the adhesive film for a semiconductor by picking up the plurality of semiconductor chips in a laminating direction of the laminate, thereby preparing the semiconductor chip with the adhesive film.   
     
     
         2 . An adhesive film for a semiconductor used in the method according to  claim 1 , the adhesive film for a semiconductor having the thickness in the range of 1 to 15 μm and the tensile elongation at break of less than 5%, the tensile elongation at break being less than 110% of the elongation at a maximum load.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.