Semiconductor device manufacturing apparatus

Abstract

A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a boundary layer forming unit for forming a boundary layer at sidewall portions and top portions of the first pattern; a second mask material layer forming unit for forming a second mask material layer so as to cover a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; a boundary layer etching unit for forming a second pattern by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths.

1 . A semiconductor device manufacturing apparatus for forming a mask for etching an etching target layer on a substrate, the apparatus comprising:
 a first pattern forming unit for forming a first pattern by patterning a first mask material layer made of a photoresist;   a boundary layer forming unit for forming a boundary layer, which is made of a material selectively removable with respect to the photoresist, at sidewall portions and top portions of the first pattern;   a second mask material layer forming unit for forming a second mask material layer, which is made of a material that allows the boundary layer to be selectively removed, so as to cover a surface of the boundary layer;   a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer;   a boundary layer etching unit for forming a second pattern made of the second mask material layer by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and   a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths.   
     
     
         2 . A semiconductor device manufacturing apparatus for forming a mask for etching an etching target layer on a substrate, the apparatus comprising:
 a first pattern forming unit for forming a first pattern by patterning a first mask material layer made of a photoresist;   a boundary layer forming unit for forming a boundary layer, which is made of a material selectively removable with respect to the photoresist, at sidewall portions and top portions of the first pattern;   a second mask material layer forming unit for forming a second mask material layer, which is made of a material that allows the boundary layer to be selectively removed, while top portions of the boundary layer are exposed;   a boundary layer etching unit for forming a second pattern made of the second mask material layer by etching and removing the boundary layer and forming a void between the sidewall portions of the first pattern and the second mask material layer; and   a trimming unit for reducing a width of the first pattern and a width of the second pattern to predetermined widths.