CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device

Abstract

When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.

1 - 4 . (canceled) 
     
     
         5 . A CMP polishing apparatus which has a washing treatment device that performs a washing treatment using an organic solvent or a solution containing an organic solvent on the substrate from which the slurry and polishing residue remaining on the surface following CMP polishing have been removed by cleaning with a cleaning liquid. 
     
     
         6 . A CMP polishing apparatus which has a heat treatment device that performs a heat treatment on the substrate from which the slurry and polishing residue remaining on the surface following CMP polishing have been removed by cleaning with a cleaning liquid. 
     
     
         7 . The CMP polishing apparatus according to  claim 5  further comprising a heat treatment device that performs a heat treatment on this substrate. 
     
     
         8 . (canceled) 
     
     
         9 . The CMP polishing apparatus according to  claim 5 , wherein the organic solvent contains at least one member from the group consisting of alcohols, aldehydes, ketones, esters, ethers, amides, polyhydric alcohols and derivatives of the same, nitrogen-containing organic compounds, hydrocarbons, halogenated hydrocarbons, and fluorine compounds. 
     
     
         10 . The CMP polishing apparatus according to  claim 6 , wherein the heat treatment is performed under reduced pressure. 
     
     
         11 . The CMP polishing apparatus according to  claim 6 , wherein the substrate is placed in an inert gas during the heat treatment. 
     
     
         12 . The CMP polishing apparatus according to  claim 5  or  6  wherein the CMP polishing apparatus removes wiring materials and barrier metals. 
     
     
         13 . The CMP polishing apparatus according to  claim 5  or  6 , wherein the cleaning liquid contains a surfactant. 
     
     
         14 . The CMP polishing apparatus according to  claim 5 , wherein the organic solvent removes organic matter which is in a cleaning liquid and has seeped into an interlayer insulating film. 
     
     
         15 . The CMP polishing apparatus according to  claim 14 , wherein the heat treatment device heats the substrate to a temperature that is equal to or greater than the thermal decomposition temperature of the organic matter to decompose the organic matter.