Nanowires formed by employing solder nanodots

Abstract

A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.

1 . A photovoltaic device, comprising:
 a substrate layer having a plurality of nanoscale pillar structures formed therein by a process having a temperature less than about  200  degrees Celsius; and   a continuous photovoltaic stack conformally formed over the substrate layer and extending over and between the plurality of nanoscale pillar structures to form a three-dimensional structure, the photovoltaic stack having a thickness of less than one micron and configured to transduce incident radiation into current flow.   
     
     
         2 . The device as recited in  claim 1 , wherein the photovoltaic stack includes a P-type layer, an N-type layer and an intrinsic layer disposed therebetween. 
     
     
         3 . The device as recited in  claim 1 , wherein the photovoltaic stack includes at least one of amorphous silicon, micro-crystalline silicon and silicon carbide. 
     
     
         4 . The device as recited in  claim 1 , wherein the structures are formed by etching the substrate layer using solder nanodots as an etch mask. 
     
     
         5 . The device as recited in  claim 1 , wherein the structures include angled sidewalls. 
     
     
         6 . The device as recited in  claim 1 , wherein the substrate layer includes one of glass and a polymer. 
     
     
         7 . The device as recited in  claim 1 , further comprising at least one additional continuous photovoltaic stack formed on the continuous photovoltaic stack. 
     
     
         8 . The device as recited in  claim 1 , further comprising a back reflective material formed in contact with the continuous photovoltaic stack.