Etching solution for multilayer thin film having copper layer and molybdenum layer contained therein

Abstract

Discloses are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein; and an etching method of a multilayer thin film having a copper layer and a molybdenum layer contained therein using the same. Specifically disclosed are an etching solution for a multilayer thin film having a copper layer and a molybdenum layer contained therein, which includes (A) hydrogen peroxide, (B) a fluorine atom-free inorganic acid, (C) an organic acid, (D) an amine compound having a carbon number of from 2 to 10 and having an amino group and a hydroxyl group in a total group number of 2 or more, (E) an azole, and (F) a hydrogen peroxide stabilizer, and which has a pH of from 2.5 to 5; and an etching method using the same.

1 . An etching solution, comprising:
 (A) hydrogen peroxide;   (B) a fluorine atom-free inorganic acid;   (C) an organic acid;   (D) an amine compound comprising from 2 to 10 carbons and at least two selected from the group consisting of an amino group and a hydroxyl group;   (E) an azole; and   (F) a hydrogen peroxide stabilizer,   wherein the etching solution has a pH of from 2.5 to 5.   
     
     
         2 . The etching solution of  claim 1 , wherein the inorganic acid (B) is sulfuric acid, nitric acid, or a mixture thereof. 
     
     
         3 . The etching solution of  claim 1 , wherein the organic acid (C) is succinic acid, glycolic acid, lactic acid, malonic acid, malic acid, or any mixture thereof. 
     
     
         4 . The etching solution of  claim 1 , wherein the amine compound (D) is ethanolamine, 1-amino-2-propanol, N,N-diethyl-1,3-propanediamine, or any mixture thereof. 
     
     
         5 . The etching solution of  claim 1 , wherein the azole (E) is 5-amino-1H-tetrazole. 
     
     
         6 . The etching solution of  claim 1 , wherein the hydrogen peroxide stabilizer (F) is phenylurea. 
     
     
         7 . The etching solution of  claim 1 , comprising:
 from 4.5 to 7.5% by mass of the hydrogen peroxide (A);   from 0.01 to 3% by mass of the inorganic acid (B);   from 5 to 13% by mass of the organic acid (C);   from 2 to 7% by mass of the amine compound (D);   from 0.001 to 0.3% by mass of the azole (E); and   from 0.01 to 0.5% by mass of the hydrogen peroxide stabilizer (F).   
     
     
         8 . The etching solution of  claim 1 , further comprising:
 from 100 to 2000 ppm of a copper ion.   
     
     
         9 . The etching solution of  claim 1 , wherein the etching solution is adapted for a multilayer thin film comprising a copper layer and a molybdenum layer, wherein the copper layer is laminated on the molybdenum layer. 
     
     
         10 . A method for etching a multilayer thin film comprising a copper layer and a molybdenum layer, the method comprising:
 contacting an etching subject with the etching solution of  claim 1 .   
     
     
         11 . The method of  claim 10 , wherein the multilayer thin film comprises a copper layer laminated on a molybdenum layer. 
     
     
         12 . The etching solution of  claim 7 , wherein the inorganic acid (B) is sulfuric acid, nitric acid, or a mixture thereof. 
     
     
         13 . The etching solution of  claim 7 , wherein the organic acid (C) is succinic acid, glycolic acid, lactic acid, malonic acid, malic acid, or any mixture thereof. 
     
     
         14 . The etching solution of  claim 7 , wherein the amine compound (D) is ethanolamine, 1-amino-2-propanol, N,N-diethyl-1,3-propanediamine, or any mixture thereof. 
     
     
         15 . The etching solution of  claim 7 , wherein the azole (E) is 5-amino-1H-tetrazole. 
     
     
         16 . The etching solution of  claim 7 , wherein the hydrogen peroxide stabilizer (F) is phenylurea. 
     
     
         17 . The etching solution of  claim 12 , wherein the organic acid (C) is succinic acid, glycolic acid, lactic acid, malonic acid, malic acid, or any mixture thereof. 
     
     
         18 . The etching solution of  claim 17 , wherein the amine compound (D) is ethanolamine, 1-amino-2-propanol, N,N-diethyl-1,3-propanediamine, or any mixture thereof. 
     
     
         19 . The etching solution of  claim 18 , wherein the azole (E) is 5-amino-1H-tetrazole. 
     
     
         20 . The etching solution of  claim 19 , wherein the hydrogen peroxide stabilizer (F) is phenylurea.