Method for operating a semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate having at least a pn-junction arranged in the semiconductor substrate. At least a field electrode is arranged at least next to a portion of the pn-junction, wherein the field electrode is insulated from the semiconductor substrate. A switching device is electrically connected to the field electrode and adapted to apply selectively and dynamically one of a first electrical potential and a second electrical potential, which is different to the first electrical potential, to the field electrode to alter the avalanche breakdown characteristics of the pn-junction.

1 .- 17 . (canceled) 
     
     
         18 . A method for operating a semiconductor device, comprising:
 providing a semiconductor device which comprises a semiconductor substrate comprising at least a pn-junction arranged in the semiconductor substrate, at least a field electrode arranged at least next to a portion of the pn-junction, the field electrode being insulated from the semiconductor substrate;   operating the pn-junction at least temporarily in reverse mode;   applying a first electrical potential to the field electrode; and   temporarily disconnecting the field electrode from the first electrical potential and applying a second electrical potential to the field electrode so that the avalanche breakdown characteristics of the pn-junction are altered.   
     
     
         19 . The method of  claim 18 , wherein the second electrical potential is repeatedly temporarily applied to the field electrode. 
     
     
         20 . The method of  claim 18 , wherein the second electrical potential is applied to the field electrode shortly before an avalanche breakdown occurs. 
     
     
         21 .- 25 . (canceled)