US2013001622A1PendingUtilityA1
Substrate for mounting optical semiconductor element and manufacturing method thereof, optical semiconductor device and manufacturing method for thereof
Est. expiryOct 11, 2027(~1.2 yrs left)· nominal 20-yr term from priority
H10W 90/756H10W 90/736H10W 90/00H10W 74/00H10W 72/5522H10W 72/884H10W 72/0198H10H 20/8506H05K 3/3436
47
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Claims
Abstract
A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on the upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting an optical semiconductor element.
Claims
exact text as granted — not AI-modified1 . An optical semiconductor device comprising:
a substrate for mounting an optical semiconductor element; at least one optical semiconductor element in a depressed-portion bottom face of the substrate for mounting an optical semiconductor element; and a fluorescent material-containing transparent sealing resin layer within the depressed portion so as to cover the optical semiconductor element, wherein the substrate for mounting an optical semiconductor element includes: a base substrate, having an insulating layer and a plurality of wiring circuits formed on a upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on a upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting the optical semiconductor element, wherein the optical reflection member comprises a thermosetting optical reflection resin.
2 . The optical semiconductor device according to claim 1 , wherein at least one of the external connection terminal formation opening portions is provided directly below a mounting position of an optical semiconductor element to be mounted in the depressed portion.
3 . The optical semiconductor device according to claim 1 , wherein inner faces of the external connection terminal formation opening portions are covered with a material with high thermal conductivity.
4 . The optical semiconductor device according to claim 1 , wherein an external connection terminal formed in the external connection terminal formation opening portion is any one of a solder ball, solder paste, an electrode pad, and a needle-shape terminal.
5 . The optical semiconductor device according to claim 1 , wherein at least an inner peripheral face of the optical reflection member formed in the depressed portion is formed from a thermosetting optical reflection resin composition which has, as essential components, (A) an epoxy resin, (B) a curing agent, (C) a curing catalyst, (D) an inorganic filler material, and (E) a white pigment.
6 . The optical semiconductor device according to claim 1 , wherein the thermosetting optical reflection resin is a resin formed by curing a resin composition comprising an epoxy resin, a curing agent, a curing catalyst, an inorganic filler and a white pigment.
7 . The optical semiconductor device according to claim 5 , wherein the thermosetting optical reflection resin composition further includes a coupling agent.
8 . The optical semiconductor device according to claim 1 , wherein the thermosetting optical reflection resin has an optical reflectivity at wavelengths from 350 to 800 nm of 80% or higher.Cited by (0)
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