Diffuser structure and manufacturing method thereof

Abstract

A diffuser structure and a manufacturing method thereof are disclosed. The diffuser structure includes a substrate, a plurality of throughholes, and a glue layer. The throughholes are perpendicularly formed in the substrate. Each throughhole includes a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part to the gas-out part. The glue layer is formed on a side wall of each gas-out part, and a thickness of the glue layer is between 1 μm and 11 μm. The present invention can solve a problem that particles are periodically generated after a periodic self-cleaning function is implemented in a plasma-enhanced chemical vapor deposition system.

1 . A manufacturing method of a diffuser structure, the diffuser structure comprising a substrate and a plurality of throughholes formed perpendicularly in the substrate, each of the throughholes comprising a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part and the gas-out part, the manufacturing method comprising steps of:
 cleaning the diffuser structure by using a chemical solution; and   forming a glue layer on a side wall of each gas-out part, wherein a thickness of the glue layer is between 1 μm and 11 μm.   
     
     
         2 . The manufacturing method of the diffuser structure of  claim 1 , further comprising a step of washing the diffuser structure by using pressurized water before the step of forming the glue layer on the side wall of each gas-out part. 
     
     
         3 . The manufacturing method of the diffuser structure of  claim 1 , wherein the chemical solution is a nitric acid solution. 
     
     
         4 . The manufacturing method of the diffuser structure of  claim 1 , wherein the glue layer is formed on the side wall of each gas-out part by an anodization process with a sulfuric acid solution. 
     
     
         5 . The manufacturing method of the diffuser structure of  claim 4 , wherein a concentration of the sulfuric acid solution is between about 15 and 25 weight percent. 
     
     
         6 . The manufacturing method of the diffuser structure of  claim 4 , wherein a temperature of the sulfuric acid solution is between −5 degree C. and 20 degree C. 
     
     
         7 . The manufacturing method of the diffuser structure of  claim 1 , wherein the thickness of the glue layer is between 1 μm and 3 μm. 
     
     
         8 . The manufacturing method of the diffuser structure of  claim 1 , wherein the substrate is made of metal. 
     
     
         9 . The manufacturing method of the diffuser structure of  claim 8 , wherein the substrate is made of aluminum. 
     
     
         10 . The manufacturing method of the diffuser structure of  claim 1 , wherein the glue layer is an oxide layer. 
     
     
         11 . The manufacturing method of the diffuser structure of  claim 1 , further comprising a step of forming the glue layer on a side wall of each connecting part in the step of forming the glue layer on the side wall of each gas-out part. 
     
     
         12 . The manufacturing method of the diffuser structure of  claim 1 , further comprising a step of forming the glue layer on a side wall of each gas-in part in the step of forming the glue layer on the side wall of each gas-out part.