Copper oxide etchant and etching method using the same

Abstract

In order to provide a copper oxide etchant and an etching method using the same capable of selectively etching exposure/non-exposure portions when laser light exposure is performed by using copper oxide as a thermal-reactive resist material, the copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing the copper oxide as a main component contains at least a chelating agent or salts thereof.

1 . A copper oxide etchant for selectively etching copper oxides having different oxidation numbers in a copper oxide-containing layer containing copper oxide as a main component, wherein the copper oxide etchant contains at least a chelating agent or a salt thereof. 
     
     
         2 . The copper oxide etchant according to  claim 1 , wherein the chelating agent contains at least one element selected from a group consisting of amino acids such as alanine, arginine, asparagine, aspartic acid, cysteine, glutamine, glutamic acid, glycine, histidine, isoleucine, leucine, lysine, methionine, ornithine, phenylalanine, serine, threonine, tryptophan, tyrosine, valine, and proline, or other chelating agents such as oxalic acid, ethylenediaminetetraacetic acid, hydroxyethylethylenediaminetriacetic acid, dihydroxyethylethylenediaminediaceticacid, 1,3-propanediaminetertaacetic acid, citric acid, fumaric acid, adipic acid, succinic acid, malic acid, tartaric acid, and bathocuproinesulfonic acid, or salts thereof. 
     
     
         3 . The copper oxide etchant according to  claim 1  or  2 , wherein the chelating agent contains at least one of the amino acids. 
     
     
         4 . The copper oxide etchant according to  claim 3 , wherein the amino acid contains at least one element selected from a group consisting of glycine, alanine, ornithine, and lysine. 
     
     
         5 . The copper oxide etchant according to  claim 1 , wherein a ratio of the chelating agent in the copper oxide etchant is equal to or greater than 0.00001 mass % and equal to or smaller than 10 mass %. 
     
     
         6 . An etching method using the copper oxide etchant according to  claim 1 , the etching method comprising:
 a thermal decomposition process for thermally decomposing copper oxide in a predetermined area of a copper oxide-containing layer containing copper oxide; and   an etching process for supplying the copper oxide etchant to the copper oxide-containing layer to remove copper oxide in a predetermined area thermally decomposed from the copper oxide-containing layer.   
     
     
         7 . The etching method according to  claim 6 , wherein, in the etching process, a liquid discharge pressure when the copper oxide etchant is applied is equal to or greater than 0.005 MPa and equal to or smaller than 0.15 MPa.