Capacitive cvd reactor and methods for plasma cvd process

Abstract

A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

1 . A capacitively coupled plasma chemical vapor deposition (CVD) reactor, comprising:
 a chamber body;   an anode situated at the ceiling of the chamber body, the anode being coupled to ground;   a gas injection apparatus coupled to a deposition gas source for selectively injecting deposition gas into the chamber;   a susceptor situated within the chamber body;   a heater situated within the susceptor;   an electrode situated within the susceptor;   a high frequency RF generator coupled to the electrode; and,   a low frequency RF generator coupled to the electrode.   
     
     
         2 . The reactor of  claim 1 , further comprising energy source coupled to the heater to maintain the heater at temperature in the range of 100° C.-500° C. 
     
     
         3 . The reactor of  claim 1 , wherein the high frequency RF generator operates at frequency of 27 MHz or higher. 
     
     
         4 . The reactor of  claim 1 , wherein the low frequency RF generator operates at frequency of 13.56 MHz or lower. 
     
     
         5 . The reactor of  claim 1 , wherein the gas injection apparatus is further coupled to an etching gas source. 
     
     
         6 . The reactor of  claim 5 , wherein the gas injection apparatus is further coupled to a chamber cleaning gas source. 
     
     
         7 . The reactor of  claim 1 , wherein the gas injection apparatus is further coupled to a chamber cleaning gas source.